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Composition, stripping liquid, application of stripping liquid in stripping photoresist or photoresist residues and stripping method

A technology of composition and stripping solution, applied in optics, opto-mechanical equipment, photosensitive material processing and other directions, can solve the problems of reducing the stripping ability of photoresist stripping agent and photoresist, reducing wiring reliability, etc., to improve permeability, The effect of rapid cleaning and improved protection

Active Publication Date: 2021-11-02
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method reduces the resist stripping ability of the photoresist stripper, leaving a photoresist film, which reduces the reliability of wiring

Method used

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  • Composition, stripping liquid, application of stripping liquid in stripping photoresist or photoresist residues and stripping method
  • Composition, stripping liquid, application of stripping liquid in stripping photoresist or photoresist residues and stripping method
  • Composition, stripping liquid, application of stripping liquid in stripping photoresist or photoresist residues and stripping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] With the total mass percentage being 100%, weigh the following components in mass percentage: 5% tetramethylammonium hydroxide, 30% monoethanolamine, 20% ethylene glycol methyl ether, 5% sodium sulfite, 20% dimethyl sulfoxide, 3% 4-hydroxy-1H-benzotriazole, 2% 5-carboxybenzotriazole, 0.001% 2,4,7,9-tetramethyl-5-decyne-4, 7-diol, 14.999% deionized water. Deionized water, sodium sulfite, dimethyl sulfoxide, ethylene glycol methyl ether, 2,4,7,9-tetramethyl-5-decyne-4,7-diol, tetramethylammonium hydroxide, Monoethanolamine, 4-hydroxyl-1H-benzotriazole, and 5-carboxybenzotriazole are sequentially added to the stirring tank and stirred and dissolved to prepare a stripping solution. During the dissolution process, the temperature of the stirring tank is controlled below 40°C, and the stripping solution After preparation, filter with a 0.1um filter element.

Embodiment 2-22

[0063] Table 1 provides the formula of the preparation stripping liquid of embodiment 2-22, presses listed component and content thereof in table 1, deionized water, reducing agent, water-soluble aprotic polar organic solvent, glycol ether compound, Wetting agent, organic amine compound, alkanolamine, and corrosion inhibitor are sequentially added to the stirring tank and stirred to dissolve to prepare the stripping solution. During the dissolution process, the temperature of the stirring tank is controlled below 40°C. After the stripping solution is prepared, use a 0.1um filter element filter.

[0064] The photoresist stripping liquid formula of table 1 embodiment 2-22

[0065]

[0066]

[0067]

[0068]

[0069] Table 2 lists the formula of comparative example 1-5 photoresist stripping liquid, presses the component listed in table 2 and content thereof, deionized water, reducing agent, water-soluble aprotic polar organic solvent, glycol ether compound, Wetting a...

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Abstract

The invention discloses a composition, stripping liquid thereof, application of the stripping liquid in stripping photoresist or photoresist residues and a stripping method. The composition comprises a water-soluble aprotic polar organic solvent, an organic amine compound, a corrosion inhibitor, a glycol ether compound and a wetting agent. The corrosion inhibitor contains at least one of compounds shown in a formula I and at least one of compounds shown in a formula II; R1 and R2 are independently selected from any one of an organic electron-donating group and H; R1 and R2 are not H at the same time; R3 and R4 are independently selected from any one of an organic electron withdrawing group and H; R3 and R4 are not H at the same time; the organic electron-donating group is selected from phenyl, hydroxyl, amino, methoxyl or C1-5 alkyl; the organic electron withdrawing group is selected from acetyl, acetamido, cyano, C1-3 carboxyl, C1-3 carboxylic ester group or nitryl. On the basis of effectively removing the photoresist, the stripping liquid has a very good protection effect on a metal electrode, especially Cu, and oxidation and corrosion of Cu can be inhibited.

Description

technical field [0001] The invention relates to a composition used in a semiconductor manufacturing process, a stripping liquid with a metal protection function and its application and stripping method in stripping photoresist or photoresist residue, belonging to the technical field of fine chemicals . Background technique [0002] In the manufacture of semiconductor devices, in order to increase the stripping ability, the content of organic alkali in the stripping solution gradually increases, which will cause serious corrosion to the substrate and metal wiring, which will affect the yield of the product, and the chemical resistance of copper is also poor. , Therefore, when the photoresist film is stripped in the cleaning process, it is easily oxidized or corroded by exposure to the photoresist stripping solution. Such oxidation or corrosion of the copper electrodes leads to an increase in the resistance of the entire wiring, and reduces the advantage of being a low-resist...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/426
Inventor 侯军任浩楠
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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