Supercharge Your Innovation With Domain-Expert AI Agents!

Omnibearing imaging CsPbCl3 spherical ultraviolet detector and production method thereof

An ultraviolet detector, an all-round technology, applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc. problems such as limited field of view, to achieve the effect of promoting application, controllable preparation method, and high repeatability

Active Publication Date: 2021-11-02
HUAZHONG UNIV OF SCI & TECH +1
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above two detectors have the following problems: filters are required for work, which will inevitably limit the field of view; refrigeration is required for work, resulting in very large detector volume and power consumption
[0003] In ultraviolet detection, ultraviolet imaging has become the main and priority development direction. However, to realize omni-directional and large-scale detection and imaging based on traditional planar imaging devices, theoretically it is necessary to use a combination of four or six detectors, or use multi-degree-of-freedom rotation The combination of motor and single detector will undoubtedly increase the size and power consumption of the ultraviolet omnidirectional detection and imaging system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Omnibearing imaging CsPbCl3 spherical ultraviolet detector and production method thereof
  • Omnibearing imaging CsPbCl3 spherical ultraviolet detector and production method thereof
  • Omnibearing imaging CsPbCl3 spherical ultraviolet detector and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Select a silicon wafer containing an oxide layer of a suitable size (the size used in this embodiment is 20×20mm, and the thickness of the oxide layer is 280nm), and clean it; the ultra-thin flexible transparent PI substrate (the thickness in this embodiment is 25 μm) Adhered to the rigid silicon substrate surface by polyimide tape;

[0043] (2) 10nm Cr and 40nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation coating process, and resistive thermal evaporation coating process, combined with wet stripping process to prepare Cr / Au composite meridional metal electrodes;

[0044] (3) Deposit 100nm Al on the surface of the intersecting part of the target's warp and latitude metal electrodes by using the photolithographic overlay process combined with the magnetron sputtering coating process 2 o 3 ;

[0045] (4) 10nm Cr and 90nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation co...

Embodiment 2

[0053] (1) Select an oxide-containing silicon wafer of a suitable size (in this case, the size is 20×20mm, and the oxide layer is 280nm), and clean it; the ultra-thin flexible transparent PI substrate (in this case, the thickness is 25 μm) is Imide tape adhered to the surface of the rigid silicon substrate;

[0054] (2) 10nm Cr and 40nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation coating process, and resistive thermal evaporation coating process, combined with wet stripping process to prepare Cr / Au meridional metal electrodes;

[0055] (3) Deposit 100nm Al on the surface of the intersecting part of the target's warp and latitude metal electrodes by using the photolithographic overlay process combined with the magnetron sputtering coating process 2 o 3 ;

[0056] (4) 10nm Cr and 40nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation coating process, and resistive thermal evaporatio...

Embodiment 3

[0064] (1) Select a silicon wafer containing an oxide layer of a suitable size (in this case, the size is 20×20mm, and the thickness of the oxide layer is 280nm), and clean it; pass the ultra-thin flexible transparent PI substrate (in this case, the thickness is 25μm) through Polyimide tape adhered to the surface of the rigid silicon substrate;

[0065] (2) 10nm Cr and 40nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation coating process, and resistive thermal evaporation coating process, combined with wet stripping process to prepare Cr / Au warp and weft metal electrodes;

[0066] (3) Deposit 10nm Al on the surface of the intersecting part of the metal electrodes in the warp and latitude directions by using the photolithographic overlay process combined with the magnetron sputtering coating process 2 o 3 ;

[0067] (4) 10nm Cr and 90nm Au were sequentially deposited by photolithographic overlay process, electron beam evaporation ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of micro-nano manufacturing and optoelectronic devices, and discloses an omnidirectional imaging CsPbCl3 spherical ultraviolet detector and a production method thereof. The spherical ultraviolet detector comprises a spherical substrate, a flexible substrate, a warp-wise metal electrode array, a weft-wise metal electrode array and a patterned CsPbCl3 perovskite thin film; and the patterned CsPbCl3 perovskite thin film array is distributed on the spherical surface of the spherical substrate, and the warp-wise metal electrode array and the weft-wise metal electrode array are utilized so that spherical imaging of ultraviolet detection can be realized. According to the invention, the device structure, the production process and the like are improved so that the obtained spherical ultraviolet detector has the advantages of omnibearing detection, large-field-of-view imaging and the like at the same time, and development and an application of spherical imaging devices and optoelectronic devices are greatly promoted.

Description

technical field [0001] The invention belongs to the field of micro-nano manufacturing and optoelectronic devices, and more specifically relates to a CsPbCl with omnidirectional imaging 3 Spherical ultraviolet detector and its preparation method. Background technique [0002] Because of its great application value in military fields such as missile approach warning and ultraviolet imaging guidance, as well as in civilian fields such as corona detection and flame detection, ultraviolet photodetectors have become another extremely important photoelectric detector after laser detection and infrared detection. Detection technology is listed as a key topic of current research and development by countries all over the world. Existing ultraviolet photodetectors include vacuum ultraviolet detectors and solid-state ultraviolet detectors. However, the above two detectors have the following problems: optical filters are required for work, which will inevitably limit the field of view;...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48C23C14/04C23C14/06C23C14/08C23C14/20C23C14/26C23C14/30C23C14/35
CPCC23C14/042C23C14/26C23C14/30C23C14/20C23C14/35C23C14/081C23C14/0694H10K71/16H10K71/80H10K30/10H10K77/111H10K30/81Y02E10/549
Inventor 廖广兰张许宁刘智勇孙博刘星月叶海波
Owner HUAZHONG UNIV OF SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com