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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices. and service life, the effect of improving the efficiency of electron injection

Pending Publication Date: 2021-11-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that in the existing quantum dot light-emitting diode, there is charge accumulation at the interface between the electron transport layer and the quantum dot, which affects the luminous efficiency and service life of the device

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

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preparation example Construction

[0053] Such as figure 2 As shown, the second aspect of the embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0054] S01. Laminating the first electrode and the first functional layer sequentially on one side of the substrate;

[0055] S02. Depositing a polymer solution on the surface of the first functional layer away from the first electrode to prepare a polymer modification layer;

[0056] S03. The second functional layer and the second electrode are sequentially stacked on the surface of the polymer modification layer away from the first functional layer;

[0057] Wherein, the first electrode is an anode, the first functional layer is a quantum dot light-emitting layer, the second functional layer is an electron transport layer, and the second electrode is a cathode; or

[0058] The first electrode is a cathode, the first functional layer is an electron transport layer, the second fun...

Embodiment 1

[0073] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0074] (1) Deposit 40nm ITO on a transparent glass substrate as an anode, and use ultraviolet light ozone (UVO) to clean the ITO surface for 15 minutes, and change the wettability of the surface while cleaning the surface;

[0075] (2) Spin-coat PEDOT:PSS (poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid)) on ITO to prepare a hole injection layer; wherein, the spin-coating speed is 5000 revolutions per minute, spin Coating for 40s; then annealing at 150°C for 15min, the whole step is carried out in air;

[0076] (3) TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)- Diphenylamine)]) was dissolved in chlorobenzene, and the TFB solution with a concentration of 8mg / ml was prepared; the hole transport layer was prepared by spin-coating the TFB solution on PEDOT:PSS; wherein, the spin-coating speed was 3000 revolutions per minute, and the spin-coat...

Embodiment 2

[0082] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0083] (1) Deposit 40nm ITO on a transparent glass substrate as an anode, and use ultraviolet light ozone (UVO) to clean the ITO surface for 15 minutes, and change the wettability of the surface while cleaning the surface;

[0084] (2) Spin-coat PEDOT:PSS on ITO to prepare a hole injection layer; wherein, the spin-coating speed is 5000 rpm, spin-coating for 40s; then annealing at 150°C for 15min, and the whole step is carried out in air;

[0085] (3) Dissolve TFB in chlorobenzene, and configure a TFB solution with a concentration of 8 mg / ml; spin-coat the TFB solution on PEDOT:PSS to prepare a hole transport layer; wherein, the spin-coating speed is 3000 rpm, and spin-coating is 30s ; Then heated at 150°C for 30min, this step was carried out in a glove box;

[0086] (4) Dissolve the quantum dots in n-octane, and configure a quantum dot solution with a concentration of 20mg / ml; ...

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Abstract

The invention belongs to the technical field of display, and relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged; a quantum dot light-emitting layer arranged between the anode and the cathode; an electron transport layer arranged between the quantum dot light-emitting layer and the cathode; and a polymer modification layer arranged between the electron transport layer and the quantum dot light-emitting layer; wherein a polymer in the polymer modification layer is selected from a polymer containing an amino functional group. According to the quantum dot light-emitting diode provided by the invention, the luminous efficiency is improved, and the service life is prolonged.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot electroluminescent display technology has become the best candidate for the next generation of display technology due to its advantages such as adjustable wavelength, high color saturation, high material stability, and low manufacturing cost. After nearly two decades of development, the external quantum efficiency of quantum dot light-emitting diodes has increased from 0.01% to over 20%. In terms of device efficiency, quantum dot light-emitting diodes (QLEDs) are already quite close to organic light-emitting diodes (OLEDs). However, despite the above-mentioned advantages of quantum dot devices, the performance of the current devices has not yet fully met the requirements of industrialization, especially for blue QLED devices. [0003] At present, the device structure o...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K50/16H10K71/00
Inventor 马兴远
Owner TCL CORPORATION
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