Small-angle silicon carbide crystal with few grain boundaries, substrate and preparation method thereof
A silicon carbide substrate, small-angle grain boundary technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as unfavorable acquisition of high-quality silicon carbide crystals, and achieve low stress and high surface quality. , high-quality effects
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Embodiment 1
[0086] The structure of the thermal insulation ring is not shown in the diagram of this embodiment, and this embodiment mainly illustrates the structure of the air layer.
[0087] The crucible 2 is a graphite crucible, and the size of the silicon carbide seed crystal in the crucible 2 is 100-350mm.
[0088] refer to Figure 1-3 , the thermal insulation layer comprises a lower thermal insulation layer, an upper thermal insulation layer 101, a side thermal insulation layer 5 and a transition thermal insulation layer 102, and a lower thermal insulation layer, an upper thermal insulation layer 101, a side thermal insulation layer 5 and a transition thermal insulation layer 102 form a thermal insulation cavity, and the upper thermal insulation layer 101 The temperature measuring hole is set; the transition insulation layer 102 is at least threaded with one of the upper insulation layer 101 and the side insulation layer 5, and is integrally formed with the other, and the transition ...
Embodiment 2
[0098] This embodiment is combined with embodiment 1 to illustrate the structural schematic diagram of adding an insulating ring. The part not shown in embodiment 1 in this embodiment is that an insulating ring can be directly placed between the crucible and the upper insulating layer.
[0099] refer to Figure 4 , the difference between this embodiment and Example 1 is that the insulation layer comprises a lower insulation layer, an upper insulation layer 101, a side insulation layer 5 and an insulation ring 8, and the insulation ring 8 is connected between the upper insulation layer 101 and the side insulation layer 5 , The lower insulation layer, the upper insulation layer 101, the side insulation layer 5 and the insulation ring 8 enclose an insulation cavity.
[0100] refer to Figure 5 , this embodiment and Example 1 figure 1 The difference between the embodiments is that the insulation layer also includes an insulation ring 8, the top of the insulation ring 8 is connec...
Embodiment 3
[0104] The method for preparing a silicon carbide substrate using either an insulating layer and a crucible in Example 2 comprises the following steps:
[0105] 1) Assembly: Provide the load-bearing raw materials and set the seed crystal on the top of the crucible, place the crucible in the heat preservation chamber formed by the heat preservation layer, and then move it into the crystal growth furnace; wherein, the heat preservation layer includes the heat preservation ring placed above the crucible, and the heat preservation The ring covers at least 0.5mm to 0.5r-0.5mm extending inward from the edge of the seed crystal, where r is the radius of the seed crystal;
[0106] 2) Growing crystals: grow crystals to prepare silicon carbide crystals, and the edge of the prepared silicon carbide crystals forms a ring shape roughly corresponding to the position covered by the heat preservation ring;
[0107] 3) Preparing a primary silicon carbide substrate: performing steps including s...
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Abstract
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