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Polydopamine film and application thereof, and method for preparing nonvolatile memristor and volatile memristor

A technology of polydopamine film and polydopamine, applied in the direction of nanotechnology, nanotechnology, electrical components, etc. for materials and surface science, can solve the problems of poor flatness, poor continuity of PDA, low thickness controllability, etc., and achieve uniformity Good performance and continuity, realize repeated storage, and facilitate the effect of integration

Active Publication Date: 2021-11-23
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the defects of poor continuity, poor flatness and low thickness controllability of PDA in the prior art, to provide a preparation method of polydopamine film and its application, to prepare nonvolatile memristor and easy The method of lossy memristor, this method can obtain the polydopamine film with large area continuous, and it has more uniform thickness, smoother surface, is conducive to the application in the aspect of electronic device

Method used

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  • Polydopamine film and application thereof, and method for preparing nonvolatile memristor and volatile memristor
  • Polydopamine film and application thereof, and method for preparing nonvolatile memristor and volatile memristor
  • Polydopamine film and application thereof, and method for preparing nonvolatile memristor and volatile memristor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] (1) Preparation of Tris-HCl buffer solution: Tris was added into deionized water, and its pH value was adjusted with dilute hydrochloric acid to obtain Tris-HCl buffer solution;

[0044] (2) Preparation of dopamine solution: dissolving dopamine hydrochloride in the Tris-HCl buffer solution to obtain dopamine solution;

[0045] (3) Preparation of polydopamine film: the dopamine solution is left standing at room temperature, and the dopamine solution is in a sealed state, self-assembled on the gas-liquid interface on the surface of the dopamine solution to form a continuous and uniform large area visible to the naked eye The film is a polydopamine film; the generated polydopamine film is transferred to the substrate by LB film technology for standby;

[0046] (4) Repeated preparation of the polydopamine film: then continue to place the dopamine solution in an airtight container, and self-assemble again on the surface of the dopamine solution to form a new polydopamine fil...

preparation example 1

[0065] Preparation of polydopamine films:

[0066] (1) Preparation of Tris-HCl buffer solution: Tris was added to deionized water, and its pH value was adjusted to 8.77 with dilute hydrochloric acid to obtain a Tris-HCl buffer solution with a Tris concentration of 5 mM;

[0067] (2) Preparation of dopamine solution: dissolving dopamine hydrochloride in the Tris-HCl buffer solution to obtain a dopamine solution with a dopamine hydrochloride concentration of 0.4 mg / mL;

[0068] (3) Preparation of polydopamine film: under airtight conditions, the dopamine solution was left to stand at room temperature for 1.2 hours, and self-assembled on the gas-liquid interface on the surface of the dopamine solution to form a large-area uniform film visible to the naked eye, which is the polydopamine film. Dopamine film, adopting LB (langmuir-blogett) transfer method to transfer the polydopamine film that generates to the substrate for subsequent use;

[0069] (4) Repeated preparation of the p...

preparation example 2-5

[0093] The polydopamine film of this preparation example was prepared according to the method of preparation example 1, except that the corresponding parameters in the following table 1 were used instead of the parameters of preparation example 1, and the test results are shown in table 1.

[0094] Table 1

[0095]

[0096] As can be seen from Table 1, the present invention can regulate the thickness of the film by changing the standing time, because the method of the present invention makes the polymerization rate slow, even after self-assembly 6h the thickness of the polydopamine film is also less than 10nm. It can be known from Example 1 and Comparative Examples 1-2 that the polydopamine film prepared by the method of the present invention has a more controllable and smaller thickness and is smoother.

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Abstract

The invention relates to the technical field of film materials, and particularly discloses a polydopamine film and application thereof, and a method for preparing a nonvolatile memristor and a volatile memristor. The two-dimensional polydopamine film is easy to prepare and has controllable thickness and good uniformity. The uniform two-dimensional polydopamine film structure can realize transformation from an amorphous structure to an ordered structure under the action of an electric field, and changes from a high resistance state to a low resistance state along with the transformation. Based on the unique structural characteristic and abundant hydroxyl groups and amino groups inherent on the surface of the large-area uniform two-dimensional polydopamine film, the polydopamine film can be applied to nonvolatile memories and volatile memories, and has high on-off ratio and good stability.

Description

technical field [0001] The invention relates to the technical field of film materials, in particular to a polydopamine film and its application, and a method for preparing a nonvolatile memristor and a volatile memristor. Background technique [0002] In recent years, memristive devices (also known as resistive switching devices) have been widely used in non-volatile memories, reconfigurable switches, bionic neuromorphic computing, and radio frequency switches due to their low power consumption, fast switching speed, and high durability. field shows great application potential. [0003] Typically, memristive devices adopt a relatively simple metal / insulator / metal structure and mainly work under two mechanisms. For example, in electrochemical metallized storage systems, the formation and dissolution of metal filaments such as Cu or Ag can be used to construct low and high resistance states. Additionally, in variable-valence memory devices, the movement of oxygen anions or t...

Claims

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Application Information

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IPC IPC(8): C08L79/04C08J5/18B22F1/00B22F9/24B82Y30/00B82Y40/00H01L45/00
CPCC08J5/18B22F9/24B82Y30/00B82Y40/00C08J2379/04H10N70/245H10N70/8416H10N70/881H10N70/011
Inventor 于贵王华平姜倩晴蔡乐
Owner INST OF CHEM CHINESE ACAD OF SCI
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