Manufacturing method of silicon carbide carrying disc for plasma etching and silicon carbide carrying disc

Abstract

The invention belongs to the technical field of carrying discs, and particularly relates to a manufacturing method of a silicon carbide carrying disc for plasma etching and the silicon carbide carrying disc. The manufacturing method of the silicon carbide carrying disc comprises the following steps of (1) forming a plain blank, namely forming the silicon carbide plain blank meeting the size requirement by adopting silicon carbide granulation powder of a solid-phase sintering system through a process of firstly performing dry pressing and then performing isostatic pressing or directly performing isostatic pressing, (2) plain blank processing: according to the finished product size and the high-temperature sintering shrinkage rate of the plasma etching carrier disc, reserving certain sintering allowance for the outer circle, the total thickness and the groove depth of the front and back surfaces, and processing the formed plain blank, (3) high-temperature sintering: carrying out high-temperature sintering on the processed silicon carbide carrier plate blank, (4) finish machining: performing precision grinding and plane grinding on the outer circle of the carrying disc, and then machining the reverse side of the carrying disc by taking the groove depth of the reverse side as a reference, processing the front surface of the carrying disc by taking the total thickness requirement of the carrying disc as a reference, and finally, precisely grinding the wafer groove until the groove depth requirement is met.

Description

technical field [0001] The application belongs to the technical field of carrier discs, and in particular relates to a method for manufacturing a silicon carbide carrier disc for plasma etching and a silicon carbide carrier disc. Background technique [0002] ICP etching (Inductively Coupled Plasma Etch), that is, inductively coupled plasma etching. The high-frequency glow discharge effect is used to activate the reactive gas into active particles, such as atoms or free radicals. These active particles diffuse to the part to be etched, react with the material to be etched, and form volatile reactants to be removed. Its advantage lies in the fast etching rate and good physical morphology can be obtained at the same time. Applied to dry etching semiconductor materials such as GaAs, GaN, InGaAs, HfOx and ZnO. [0003] ICP etching often uses a compound gas containing multiple components, the most important of which is the etching reaction gas, which chemically reacts with the ...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem that material suppliers and processing manufacturers do not have a good understanding of materials and processing in the manufacturing process of silicon carbide carriers in the prior art, the processing time is relatively long, the processing cost is high, and no reasonable solution can be found when end users have problems. problems, and directly processing grooves on finished silicon carbide disks has the problems of high processing stress, limited groove depth, and high scrap rate. This application discloses a method for manufacturing silicon carbide carrier disks for plasma etching and silicon carbide Carrier, this manufacturing method integrates the manufacture of silicon carbide materials and the processing of the carrier structure. With the manufacture of silicon carbide materials, the carrier structure is gradually processed, which effectively improves production efficiency and greatly reduces production costs.

Images