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Formation method of semiconductor structure

A semiconductor and structure surface technology, which is applied in the field of semiconductor structure formation, can solve the problems of poor performance of semiconductor structures, and achieve the effect of improving graphic accuracy, improving performance, and increasing the size of the top

Pending Publication Date: 2021-11-30
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of existing semiconductor structures is still poor

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Embodiment Construction

[0038] As mentioned in the background, the performance of semiconductor structures is still poor. Now analyze and illustrate in conjunction with specific embodiment.

[0039] It should be noted that the "surface" in this specification is used to describe the relative positional relationship in space, and is not limited to direct contact.

[0040] Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of each step of a method for forming a semiconductor structure.

[0041] Please refer to figure 1 , providing a layer to be etched 10, the layer to be etched 10 includes several invalid areas B, and an active area A surrounding the several invalid areas B; forming a first mask material on the surface of the active area A and the inactive area B layer 20; forming a cutting barrier material layer 30 on the surface of the first mask material layer 20; forming a second mask material layer 40 on the surface of the cutting barrier material layer 30; forming a secon...

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Abstract

A method for forming a semiconductor structure comprises the following steps: providing a layer to be etched; forming a sacrificial layer on the surface of the layer to be etched, wherein the sacrificial layer is internally provided with a first opening; forming a first mask structure in the first opening, wherein the edge of the surface of the first mask structure is higher than the center of the surface; and etching the sacrificial layer until the sacrificial layer is removed. Therefore, the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the high integration of semiconductor devices, the channel length of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is continuously shortened, and a series of effect strains that can be ignored in the MOSFET long channel model become more and more significant, and even become the dominant factor affecting device performance. This phenomenon is collectively known as the short channel effect. The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] In order to overcome the short-channel effect, a three-dimensional device structure of a fin field effect transistor is proposed. The fin field effect t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/785H01L29/66803
Inventor 郑二虎
Owner SEMICON MFG INT (SHANGHAI) CORP