Indium phosphide single crystal growth device and method

Abstract

The invention relates to the technical field of crystal growth, in particular to an indium phosphide single crystal growth device, which comprises a fixed heater, a movable heater, a crystal growth container and an electromagnetic stirring device, wherein the movable heater and the electromagnetic stirring device can move outside the crystal growth container. The invention also provides an indium phosphide single crystal growth method, which comprises the following steps: putting a raw material into a crystal growth container, heating to 750 DEG C, heating to 1075 DEG C through a movable heater, moving the movable heater and a electromagnetic stirring device until the vertical surface of the movable heater and the electromagnetic stirring device leaves the crystal growth container, keeping the temperature, and cooling the furnace temperature to room temperature. According to the invention, Si pollution is reduced, and the prepared single crystal is high in purity; by adopting the method of the movable heater, vibration possibly caused by moving the crystal growth container is avoided, and the single crystal rate can be effectively improved; and movement of the temperature field is achieved through relative movement of the double heaters, temperature field control is relatively simple, the temperature control precision error-tolerant rate is high, and maintenance and calibration are convenient.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a growth device and a growth method of indium phosphide single crystal. Background technique [0002] Indium phosphide is a compound semiconductor that has been prepared for many years. It is different from the first-generation semiconductors (such as Si) of pure elements and the third-generation semiconductors (such as SiC) characterized by ultra-wide bandgap. InP is generally considered a second-generation semiconductor. In recent years, with the development of technology in the communication field, there are new demands and technical requirements for indium phosphide. [0003] There are many methods for growing indium phosphide single crystal, such as liquid-enclosed Czochralski method (LEC), horizontal Bridgman method, vertical Bridgman method, vertical temperature gradient method (VGF) and so on. These methods have their own limitations. For example, the crystal in...

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Problems solved by technology

[0004] The invention solves the problem of high difficulty in controlling the temperature field and the need for repeated maintenance in the related art, and the problem of Si pollution caused by high-temperature melt contacting the quartz container for a long time, and proposes a growth device for indium phosphide single crystal, by setting a fixed heater and moving heating and the mobile heater can be moved outside the crystal growth container, which can achieve precise temperature control at low cost. After calibration, the temperature field is stable and can be used for a long time. The average contact temperature of the quartz container during the growth process is low, which greatly reduces Si pollution.

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