GaN-based radio frequency device with terminal structure and manufacturing method of device

Abstract

The invention discloses a GaN-based radio frequency device with a terminal structure and a manufacturing method of the device. The radio frequency device comprises a substrate, a nucleating layer, a buffer layer, a channel layer and a barrier layer, wherein the nucleating layer, the buffer layer, the channel layer and the barrier layer are sequentially located at one side of the substrate. In the direction perpendicular to the plane where the substrate is located, the barrier layer comprises a first surface away from the channel layer, the source electrode and the drain electrode are oppositely arranged at the two sides of the first surface, and the gate electrode is located between the source electrode and the drain electrode. The passivation layer is positioned at the side, far away from the substrate, of the barrier layer and comprises a first passivation layer and a second passivation layer; the first passivation layer comprises an anion injection region, and the orthographic projection of the anion injection region is located between the gate electrode and the drain electrode in the direction perpendicular to the plane where the substrate is located, so that a negative charge center can be generated in the first passivation layer, the peak of a gate pin electric field is reduced, the breakdown voltage of the device is improved, the leakage current is reduced, and the on-state characteristic of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a GaN-based radio frequency device with a terminal structure and a manufacturing method thereof. Background technique [0002] With the rapid development of informatization, wireless communication, radar, satellite and other fields have put forward higher requirements for microwave high-power devices, and gallium nitride materials developed in recent years are the representative of the third-generation wide-bandgap semiconductor materials. , the gallium nitride-based heterojunction forms a two-dimensional electron gas channel with high concentration and high mobility, so that the gallium nitride-based field effect transistor has a large band gap, a high critical breakdown field strength, a large thermal conductivity, and a saturated The characteristics of high electron drift speed and high carrier mobility are especially suitable for high-voltage, high-temperat...

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Problems solved by technology

However, when a device with a field plate structure operates in the millimeter wave frequency band above 30 GHz, parasitic capacitance will be introduced, which will weaken the frequency characteristics of the device and affect the application scenarios of microwave devices

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