The invention discloses a GaN-based radio frequency device with a terminal structure and a manufacturing method of the device. The radio frequency device comprises a substrate, a nucleating layer, a buffer layer, a channel layer and a barrier layer, wherein the nucleating layer, the buffer layer, the channel layer and the barrier layer are sequentially located at one side of the substrate. In the direction perpendicular to the plane where the substrate is located, the barrier layer comprises a first surface away from the channel layer, the source electrode and the drain electrode are oppositely arranged at the two sides of the first surface, and the gate electrode is located between the source electrode and the drain electrode. The passivation layer is positioned at the side, far away from the substrate, of the barrier layer and comprises a first passivation layer and a second passivation layer; the first passivation layer comprises an anion injection region, and the orthographic projection of the anion injection region is located between the gate electrode and the drain electrode in the direction perpendicular to the plane where the substrate is located, so that a negative charge center can be generated in the first passivation layer, the peak of a gate pin electric field is reduced, the breakdown voltage of the device is improved, the leakage current is reduced, and the on-state characteristic of the device is improved.