Organic electroluminescent element
An electroluminescent element and luminescent technology, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of low luminous rate of devices, difficulty in balancing holes and electrons, etc., and achieve the effect of weakening the interface effect and improving efficiency
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Embodiment 1
[0086] refer to figure 1 The structure shown is to use Sunic sp1710 vapor deposition machine to manufacture OLED elements. The specific steps are as follows: glass substrates (Corning glass 40mm*40mm*0.7mm) coated with ITO (indium tin oxide, as the anode layer 1) with a thickness of 135nm are respectively Ultrasonic cleaning with isopropanol and pure water for 5 minutes, and then cleaning with ultraviolet ozone, then the glass substrate was transferred to the vacuum deposition chamber; compound 1-1 and compound 2-2 were mixed (the doping mass ratio of compound 2-2 was 4%) vacuum on the transparent ITO electrode (about 10 -7 Torr) thermally deposited a thickness of 20nm to form a hole injection layer 2; on the hole injection layer, then vacuum-deposit compound 1-1 with a thickness of 60nm as the first hole transport layer 3; then vacuum-deposit a compound 3-3 with a thickness of 10nm Form the second hole-transport layer 4; then vacuum-deposit 25nm of compound A doped with a ma...
Embodiment 2
[0091] Experiments were carried out in the same manner as in Example 1, except that Compound 1-3 was used instead of Compound 1-1, Compound 2-4 was used instead of Compound 2-2, Compound 3-6 was used instead of Compound 3-3, Using Compound Compound 4-4 was used instead of Compound 4-1.
[0092] The element structure is expressed as: ITO (135nm) / compound 1-3:4% compound 2-4 (20nm) / compound 1-3 (60nm) / compound 3-6 (10nm) / compound A:4% compound 4- 4 (25nm) / Compound C:LiQ (5:5, 30nm) / Yb (2nm) / Mg:Ag (10:1, 150nm).
Embodiment 3
[0094] Experiments were carried out in the same manner as in Example 1, except that Compound 1-8 was used instead of Compound 1-1, Compound 2-6 was used instead of Compound 2-2, Compound 3-8 was used instead of Compound 3-3, Using Compounds Compound 4-6 was used instead of Compound 4-1.
[0095] The element structure is expressed as: ITO (135nm) / compound 1-8:4% compound 2-6 (20nm) / compound 1-8 (60nm) / compound 3-8 (10nm) / compound A:4% compound 4- 6 (25nm) / Compound C:LiQ (5:5, 30nm) / Yb (2nm) / Mg:Ag (10:1, 150nm).
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