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Benzoxazine resin-based composition for packaging third-generation semiconductor device and preparation method thereof

A benzoxazine and device packaging technology, applied in the field of electronic packaging materials, can solve problems such as being less than ideal, and achieve the effects of low water absorption, shielding penetration, and low melt viscosity

Active Publication Date: 2022-01-07
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the molding compound in this patent is still not ideal when applied to third-generation semiconductor device packaging materials

Method used

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  • Benzoxazine resin-based composition for packaging third-generation semiconductor device and preparation method thereof
  • Benzoxazine resin-based composition for packaging third-generation semiconductor device and preparation method thereof
  • Benzoxazine resin-based composition for packaging third-generation semiconductor device and preparation method thereof

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Effect test

Embodiment 1~3

[0063] The raw materials used in Examples 1 to 3 of the present invention and consumption are as shown in Table 1 below:

[0064] Table 1

[0065]

[0066]

[0067] In table 1, the preparation method of epoxy-terminated hyperbranched polysiloxane (EP-HBPSi) is:

[0068] EG (53.78 g, 0.3275 mol) was dissolved in 50 mL of anhydrous toluene, and then Karstedt catalyst (9 μL) was added, and then added into a three-necked flask with a condensing reflux device, and nitrogen was introduced to remove the air. TMDS (20g, 0.1488mol) was dissolved in 50mL of anhydrous toluene, and added to the constant pressure dropping funnel; the temperature of the three-necked flask was raised to 75°C, and nitrogen was blown, and the TMDS solution was added dropwise to the three-necked flask, and the drop was completed in 0.5h (10s / d). Then the temperature was raised to 85°C to continue the reaction for 10 h to obtain the crude product, a transparent yellowish liquid; finally, the excess TMDS ...

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Abstract

The invention relates to the technical field of electronic packaging materials, in particular to a benzoxazine resin-based composition for packaging a third-generation semiconductor device and a preparation method thereof. The benzoxazine resin-based composition is prepared from diamine type benzoxazine resin, multifunctional epoxy resin, an aromatic amine curing agent, an acetylacetone metal complex accelerant, inorganic filler and epoxy-terminated hyperbranched polysiloxane. The content of benzoxazine resin in the resin composition is greater than that of epoxy resin, and the resin composition can be quickly cured and molded at 150-190 DEG C, and is suitable for the curing molding modes of transfer molding, mold pressing, injection molding and the like of the existing epoxy molding compound; and the cured product has high bending strength, glass transition temperature and thermal stability, low dielectric constant and dielectric loss, and low water absorption, and is suitable for packaging third-generation semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of electronic packaging materials, in particular to a benzoxazine resin-based composition for third-generation semiconductor device packaging and a preparation method thereof. Background technique [0002] In recent years, silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), gallium oxide (Ga 2 o 3 ), diamond and other third-generation semiconductor materials are developing rapidly. Compared with the first-generation (Si) and second-generation (GaAs) semiconductor materials, the third-generation semiconductor materials have wider band gaps, higher breakdown electric fields, higher thermal conductivity, higher electron Saturation rate and higher radiation resistance are more suitable for the production of high-temperature, high-frequency, radiation-resistant and high-power devices. In the future, it will play an important role in various modern industrial fields, including 5G communications, Inte...

Claims

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Application Information

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IPC IPC(8): C08L61/34C08L63/00C08L83/06C08G59/50C08G59/70
CPCC08L61/34C08G59/5033C08G59/70C08L2203/206C08L63/00C08L83/06
Inventor 魏玮苟浩澜李小杰刘晓亚
Owner JIANGNAN UNIV
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