PI/PEEK composite insulation lapped wire and preparation method thereof
A composite insulation and wrapping wire technology, used in conductor/cable insulation, insulated cables, insulated conductors, etc., can solve the problems of low interface bonding strength, low long-term thermal aging performance, and high regularity, and achieve improved bonding. Strength, improved roughness and chemical polarity, improved thermal performance
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Example Embodiment
[0021] Example 1
[0022] The discharge power of the low temperature air plasma is disposed of 100 watts, and the surface of the high temperature polyimide PI film is oxidized etching for 10 seconds to obtain a PI film having an active surface;
[0023] The commercially available 500 destination PEEK ultrafine powder was mixed with water to prepare a PEEK suspension, adding nano-stage trioxide, the mass of the trioxide and the PEEK of 0.5: 100, stirred until dispersion uniformly obtained PEEK emulsion;
[0024] The PEEK emulsion was sprayed onto the surface of the PI film having the active surface, dried to obtain a PI / PEEK composite film;
[0025] In the surface of the metal wire surface, the PI / PEEK composite film is sintered at 350 ° C to form an insulating layer on the surface of the metal wire, and the PI / PEEK composite insulated winding line is obtained.
Example Embodiment
[0026] Example 2
[0027] The discharge power of the low temperature air plasma is set to 600 watts, and the surface of the high temperature polyimide PI film is oxidized etching for 1 second, and a PI film having an active surface is obtained;
[0028] Mix the commercially available 2000 Purpose PEEK ultrafine powder and water to prepare a PEEK suspension, add nano-grade trioxide, and the mass of the trioxide and PEEK is 1.5: 100, stirred until dispersion is uniformly obtained.
[0029] The PEEK emulsion was sprayed onto the surface of the PI film having the active surface, dried to obtain a PI / PEEK composite film;
[0030] In the surface of the metal conductor, the PI / PEEK composite film is sintered at 380 ° C to form an insulating layer on the surface of the metal wire, and the PI / PEEK recombination is obtained.
Example Embodiment
[0031] Example 3
[0032] The discharge power of the low temperature air plasma is set to 400 watts, and the surface of the high temperature polyimide PI film is oxidized etching for 6 seconds to obtain a PI film having an active surface;
[0033] The commercially available 1000 destination PEEK ultrafine powder was mixed with water to prepare a PEEK suspension, adding nano-grade trioxide, the mass of trioxide and PEEK is 1: 100, thoroughly stirred to dispersion uniformly obtain PEEK emulsion;
[0034] The PEEK emulsion was sprayed onto the surface of the PI film having the active surface, dried to obtain a PI / PEEK composite film;
[0035] In the surface of the metal conductor, the Pi / PEEK composite film is sintered at 360 ° C to form an insulating layer on the surface of the metal wire, and the PI / PEEK recombination is obtained.
[0036] The present invention is a low temperature air plasma to form an oxidative etching treatment in the surface of the PI film, and the polar ...
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