Middle and far infrared and laser compatible stealth film and design scheme thereof

A design scheme and thin-film technology, which is applied in the field of mid-far infrared and laser-compatible stealth thin film design schemes, can solve the problems of long production cycle and high production cost, and achieve the advantages of fewer film layers, small film thickness, and production cost savings Effect

Pending Publication Date: 2022-02-01
HARBIN ENG UNIV
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing 3-5μm and 8-14μm infrared band selective high-reflection films are actually the superposition of two photonic crystals with forbidden bands in different wavelength ranges, and the one-dimensional photonic crystal structure is used to realize the high-reflection areas of the two infrared window bands in the middle and far range Usually there are problems such as long production cycle and high production cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Middle and far infrared and laser compatible stealth film and design scheme thereof
  • Middle and far infrared and laser compatible stealth film and design scheme thereof
  • Middle and far infrared and laser compatible stealth film and design scheme thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] TFCalc software inputs an initial 5-layer one-dimensional photonic crystal structure with doped layers. First, set its continuous target, set it as high reflection at 3-5 μm and 8-14 μm, and set it as high transmission at 5-8 μm and 10.6 μm;

[0023] Secondly, in the interface of setting optimization parameters, two kinds of materials, germanium and zinc sulfide, are used to add the "Needle" layer, and choose to add film layers continuously to the optimal design film system, add many layers at the same time, and use local optimization before adding Needle;

[0024] Finally, select the growth film in the Tunneling parameters for structural optimization design.

[0025] After optimization, the result is as figure 1 As shown, the present invention designs a 13-layer film structure that realizes mid-far infrared and laser compati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a middle and far infrared and laser compatible stealth film and a design scheme thereof. TFCalc software inputs an initial five-layer one-dimensional photonic crystal structure with a doped layer, a continuous target of the initial five-layer one-dimensional photonic crystal structure is firstly set, high reflection is set at 3-5 micron and 8-14 micron, and high transmission is set at 5-8 micron and 10.6 micron; secondly, a ''Needle'' layer is added by adopting two materials of germanium and zinc sulfide on an optimization parameter setting interface, film layers are continuously added to an optimal design film system, a plurality of layers are added at the same time, and local optimization is adopted before adding the Needle; and finally, a growing film is selected from Tunnelling parameters for structural optimization, the film is a 13-layer film structure formed by taking glass as a substrate and alternately forming germanium and zinc sulfide with different thicknesses, the two layers close to the air and the glass are germanium, and the film can achieve compatible stealth of the middle and far infrared wave band and the 10.6-micron laser wave band.

Description

technical field [0001] The invention relates to a design scheme of a stealth film, in particular to a design scheme of a middle-far infrared and laser-compatible stealth film, belonging to the technical field of stealth materials. Background technique [0002] In the infrared detection technology, the 3-5 μm band is the radiation range of the aero-engine tail flame and the engine exhaust pipe, and is the main working band of the infrared guidance and detection system of air equipment; the 8-14 μm band is the working band of the thermal imaging system, any Objects with a temperature above thermodynamic zero will radiate in the 8-14 μm band; CO with a working wavelength of 10.6 μm 2 As the main laser detection weapon, laser can be used for ranging, guidance, target indication and jamming, etc. [0003] The existing 3-5μm and 8-14μm infrared band selective high-reflection films are actually the superposition of two photonic crystals with forbidden bands in different wavelength...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/10G02B5/20G02B5/28
CPCG02B1/10G02B5/208G02B5/281
Inventor 卢滨辉荣先辉张旭阳高阳吴威赵堃鸣韦铭
Owner HARBIN ENG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products