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Bismuth-oxygen-based ferroelectric film with atomic-scale thickness and preparation process of bismuth-oxygen-based ferroelectric film

A ferroelectric thin film, bismuth oxide technology, applied in the direction of circuits, electrical components, electric solid devices, etc., to achieve the effects of high film quality, uniform film composition, and excellent ferroelectric properties

Pending Publication Date: 2022-02-08
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention discloses an atomic-level thick bismuth-oxygen ferroelectric thin film and its preparation process to solve any of the above-mentioned and potential problems in the prior art

Method used

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  • Bismuth-oxygen-based ferroelectric film with atomic-scale thickness and preparation process of bismuth-oxygen-based ferroelectric film
  • Bismuth-oxygen-based ferroelectric film with atomic-scale thickness and preparation process of bismuth-oxygen-based ferroelectric film
  • Bismuth-oxygen-based ferroelectric film with atomic-scale thickness and preparation process of bismuth-oxygen-based ferroelectric film

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Embodiment 1

[0076] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) adding ethylene glycol methyl ether (EGME), and then adding a small amount of europium nitrate hexahydrate (Eu(NO 3 ) 3 ·6H 2 O). The molar ratio of Bi and Eu is 1:0.15 respectively, and the molar concentration (based on Bi element) is prepared as 1 mL of 0.15M precursor solution. The spin-coating and annealing processes for film preparation were carried out in air with a humidity of 35%. After the completely dissolved precursor solution was left to stand for 12 h, the Al 2 o 3 The single crystal substrate is placed on a heating plate at a temperature of 90° C. for preheating, and the preheating time is 5 minutes. Will Al 2 o 3 The substrate was transferred to a coater, and a proper amount of solution was sucked and dropped on the substrate with a pipette gun to fully cover the surface of the substrate, and spin-coated at a speed of 5000rpm / min for 30s. Move the substrate to a 90°C heating plate to dry for 10...

Embodiment 2

[0079] Bismuth acetate (C 6 h 9 BiO6 ) into dimethylformamide (DMF), then add a small amount of samarium nitrate hexahydrate (Sm(NO 3 ) 3 ·6H 2 O). The molar ratios of Bi and Sm were 1:0.1, respectively, and the molar concentration (based on Bi element) was prepared as 1 mL of 0.15M precursor solution. The spin-coating and annealing processes for film preparation were carried out in air with a humidity of 40%. After the completely dissolved precursor solution was left standing for 12 h, the precursor solution was mixed with Al 2 o 3 The single crystal substrate is placed on a heating plate at a temperature of 90° C. for preheating, and the preheating time is 5 minutes. Transfer the substrate to a glue coater, use a pipette gun to draw an appropriate amount of solution and drop it on the substrate to fully cover the surface of the substrate, and spin-coat at a speed of 5000rpm / min for 30s. Move the substrate to a 90°C heating plate to dry for 10 minutes; quickly heat to...

Embodiment 3

[0082] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) adding ethylene glycol methyl ether (EGME), and then adding a small amount of europium nitrate hexahydrate (Eu(NO 3 ) 3 ·6H 2 O). The molar ratios of Bi and Eu were 1:0.05, respectively, and the molar concentration (based on Bi element) was prepared as 1 mL of 0.15M precursor solution. The spin-coating and annealing processes for film preparation were carried out in air with a humidity of 30%. After the completely dissolved precursor solution was left standing for 12h, the Nb:SrTiO 3 The single crystal substrate is placed on a heating plate at a temperature of 90° C. for preheating, and the preheating time is 5 minutes. Nb:SrTiO 3 The substrate was transferred to a coater, and a proper amount of solution was sucked and dropped on the substrate with a pipette gun to fully cover the surface of the substrate, and spin-coated at a speed of 5000rpm / min for 30s. Move the substrate to a 90°C heating plate to dry for 1...

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Abstract

The invention belongs to the field of condensed-state physics and atomic-scale ferroelectric films, and relates to a bismuth-oxygen-based ferroelectric film with an atomic-scale thickness and a preparation process of the bismuth-oxygen-based ferroelectric film. The ferroelectric film is a bismuth oxygen-based film with three Bi-O layers as a period, the structure is a stable tetragonal-phase-like structure, and the molecular formula of the ferroelectric film is Bi (2-x) MexO3, wherein x is larger than or equal to 0.1 and smaller than or equal to 0.6, and Me is a lanthanide element. The preparation process comprises the following steps of: preparing a precursor solution from Bi and Me according to a corresponding molar ratio, spin-coating a substrate with the solution, and drying and annealing to obtain the novel layered ferroelectric film. The ferroelectric film with atomic-scale thickness is prepared through a simple sol-gel method. On the premise that the components of the precursor solution are accurately controlled, low-size films with different thicknesses can be prepared by controlling the concentration, the rotating speed, the humidity and other factors of the precursor solution. The series of films are flat in surface and excellent in ferroelectric property, and are expected to realize large-area application.

Description

technical field [0001] The invention belongs to the fields of condensed matter physics and atomic-scale ferroelectric thin films, and specifically relates to the structure and preparation process of an atomic-level thick bismuth-oxygen ferroelectric thin film. Background technique [0002] The ferroelectric thin film itself has two or more polarization states, which can be changed by applying an external electric field, and the polarization state can be maintained stably after the voltage is removed. The polarization points to the direction of positive charge accumulation, and the reversal of the polarization will cause changes in current and resistance, thereby realizing the logic storage of 0 and 1. Therefore, ferroelectric thin films are widely used in electronic components such as non-volatile memories. With the rapid development of integration technology, people's demand for micro-devices is stronger, which requires ferroelectric thin films to achieve atomic-level thic...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/50C04B35/622C04B35/624H01L27/1159
CPCC04B35/453C04B35/50C04B35/62218C04B35/624C04B2235/3224C04B2235/96H10B51/30Y02P70/50
Inventor 张林兴杨倩倩贺卓平田建军
Owner UNIV OF SCI & TECH BEIJING