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Polarization and band gap adjustable ferroelectric photovoltaic film and preparation method thereof

A ferroelectric photovoltaic and ferroelectric technology, applied in the direction of photovoltaic power generation, sustainable manufacturing/processing, circuits, etc., can solve the problems of low operating absorption coefficient, large optical band gap, obstruction, etc., and achieve low cost, high uniform quality, The effect of simple film making equipment

Active Publication Date: 2022-04-29
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The FePV effect with simultaneously large photocurrent, photovoltage, and power conversion efficiency (PCE) in BFO is greatly hindered due to its relatively low operating absorption coefficient and large optical bandgap.

Method used

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  • Polarization and band gap adjustable ferroelectric photovoltaic film and preparation method thereof
  • Polarization and band gap adjustable ferroelectric photovoltaic film and preparation method thereof
  • Polarization and band gap adjustable ferroelectric photovoltaic film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) and europium nitrate hexahydrate (Eu(NO 3 ) 3 ·6H 2 O) was added 4.8 mL ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) and ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O). Formulated as Bi 1.06 Fe 0.95 co 0.05 o 3 、 Bi 0.96 Eu 0.1 Fe 0.95 co 0.05 o 3 、 Bi 0.86 Eu 0.2 Fe 0.95 co 0.05 o 3 、 Bi 0.76 Eu 0.3 Fe 0.95 co 0.05 o 3 、 Bi 0.66 Eu 0.4 Fe 0.95 co 0.05 o 3 and Bi 0.56 Eu 0.5 Fe 0.95 co 0.05 o 3 And the precursor solution with a molar concentration of 0.2M was 5 mL. Spin-coat the film on the FTO substrate, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, first use 500rpm slow spin coating for 15s, and then use 4000rpm fast spin coating for 20s; Pyrolysis on a heating plate at 350°C for 10 minutes, air-cooled to room tempera...

Embodiment 2

[0074] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) and europium nitrate hexahydrate (Eu(NO 3 ) 3 ·6H 2 O) was added 4.8 mL ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) and ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O). Formulated as Bi 0.96 Eu 0.1 Fe 0.95 co 0.05 o 3 and Bi 0.86 Eu 0.2 Fe 0.95 co 0.05 o 3 And the precursor solution with a molar concentration of 0.2M was 5 mL. Spin-coat the thin film on the FTO substrate, first use a pipette gun to absorb an appropriate amount of Bi 0.96 Eu 0.1 Fe 0.95 co 0.05 o 3 Add dropwise on the substrate to fully cover the surface of the substrate, use 500rpm slow spin coating for 15s and then 4000rpm fast spin coating for 20s; move the substrate to a heating plate at 350°C for 10min, air cool to room temperature, and repeat 3 layers; Then move it into the annealing furnace to raise the temperature rapidly, and anneal at 650°C for 30 minutes; cool it to ...

Embodiment 3

[0079] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) and europium nitrate hexahydrate (Eu(NO 3 ) 3 ·6H 2 O) was added 4.8 mL ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) and ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O). Formulated as Bi 0.96 Eu 0.1 Fe 0.95 co 0.05 o 3 and Bi 0.86 Eu 0.2 Fe 0.95 co 0.05 o 3 And the precursor solution with a molar concentration of 0.2M was 5 mL. Spin-coat the thin film on the FTO substrate, first use a pipette gun to absorb an appropriate amount of Bi 0.96 Eu 0.1 Fe 0.95 co 0.05 o 3 Add dropwise on the substrate to fully cover the surface of the substrate, use 500rpm slow spin coating for 15s and then 4000rpm fast spin coating for 20s; move the substrate to a heating plate at 350°C for 10 minutes; air cool to room temperature, repeat 3 layers Move it into an annealing furnace to rapidly raise the temperature, and anneal at 650°C for 30 minutes; cool in air to ro...

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Abstract

The invention belongs to the field of functional films and energy storage information science and technology, and relates to a polarization and band gap adjustable ferroelectric photovoltaic film and a preparation method thereof. The ferroelectric photovoltaic film is of a ferroelectric polarization layer-light absorption layer-ferroelectric polarization layer alternating homogeneous sandwich structure, a ferroelectric layer and a light absorption layer are homogeneous component Bi < 1-x > Re < x > FeO < 3 >-based films, Re is lanthanide salt, and the preparation method adopts a chemical solution-spin coating method to synthesize the ferroelectric multifunctional film with the structure. The preparation method comprises the following steps: preparing a precursor solution with the molar concentration of 0.1-0.4 M, carrying out spin coating and pyrolysis, finally annealing in a heating furnace at the temperature of 550-750 DEG C for 20-30 minutes, and optimizing co-annealing to obtain the ferroelectric film with controllable band gap. The ferroelectric film with a novel structure is developed by adopting a device structure design and a sol-gel synthesis method, the precursor components are accurate and controllable, the synthesis conditions are simple, and the high-quality ferroelectric film with excellent performance is finally obtained.

Description

technical field [0001] The invention belongs to the field of condensed matter physics, functional thin film and energy storage information technology, and specifically relates to a ferroelectric photovoltaic thin film with adjustable polarization and band gap and a preparation method thereof. Background technique [0002] Whether ferroelectric materials can have photovoltaic properties while having high polarization has always been a scientific issue that has attracted much attention. Photovoltaic effect refers to the process in which photogenerated carriers absorb light energy through the irradiation of sunlight, and then are separated and converted from light energy to electrical energy. Compared with traditional P-N junction-based photovoltaic devices, ferroelectric photovoltaic effect (FE-PV) has unique advantages such as high output voltage and controllable photovoltaic response, and is expected to become a new generation of photovoltaic devices. Its internal mechanism ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622H01L31/032H01L31/0445H01L31/18
CPCC04B35/453C04B35/62218H01L31/0321H01L31/0445H01L31/18C04B2235/3272C04B2235/3224C04B2235/3275C04B2235/6567C04B2235/662Y02E10/50Y02P70/50
Inventor 张林兴程昕蕊席国强田建军
Owner UNIV OF SCI & TECH BEIJING
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