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A two-dimensional layered perovskite ferroelectric multifunctional thin film and its preparation process

A two-dimensional layered and perovskite technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of difficult research and development of reliable processes, difficult control of polarization direction, and difficult promotion, etc. control, low cost, and simple film-making equipment

Active Publication Date: 2021-08-17
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of this type of two-dimensional perovskite ferroelectric materials requires advanced physical preparation methods, and the process is complicated, which is not easy to promote in industry
[0004] To sum up, from the confirmation of two-dimensional ferroelectricity to the difficulty of adjusting the polarization direction, and then to the difficulty in the development of reliable processes, these are the bottlenecks for the application of two-dimensional ferroelectric materials.

Method used

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  • A two-dimensional layered perovskite ferroelectric multifunctional thin film and its preparation process
  • A two-dimensional layered perovskite ferroelectric multifunctional thin film and its preparation process
  • A two-dimensional layered perovskite ferroelectric multifunctional thin film and its preparation process

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Effect test

Embodiment 1

[0075] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) was added 7 mL of ethylene glycol methyl ether (EGME). Add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) or nickel nitrate hexahydrate (Ni(NO 3 ) 3 ·6H 2 o). The preparation chemical formula is: Bi 2 o x -BiCoO 3 and Bi 2 o x -BiNiO 3 i.e. Bi and Me 10mL of the precursor solution with a molar ratio of 3:1 and a molar concentration of 0.25M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a heating plate at 90°C for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at a speed of 5000rpm for 30s; Move the substrate to a 90°C heating plate to dry for 10 minutes; rapidly heat to 270°C and bake for 4 minutes; finally move it into an annealing furnace to rapidly raise the temperature, and anneal at 450-650°C fo...

Embodiment 2

[0078] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) was added 7 mL of ethylene glycol methyl ether (EGME). Add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) The chemical formula is: Bi 2 o x -BiCoO 3 , 10 mL of a precursor solution with a molar concentration of 0.4 M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a 90°C heating plate for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at 4000rpm for 30s; Move the substrate to a heating plate at 90°C to dry for 10 minutes; quickly heat to 270°C and bake for 4 minutes; finally divide the prepared substrates into three groups and anneal at 500°C, 560°C, and 600°C for 30 minutes respectively; ferroelectric multifunctional thin films.

[0079] The prepared thin film is subjected to XRD analysis, drawing as Fi...

Embodiment 3

[0081] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2O) was added 7 mL of ethylene glycol methyl ether (EGME). Add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) The chemical formula is: Bi 2 o x -BiCoO 3 , 10 mL of a precursor solution with a molar concentration of 0.25 M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a heating plate at 90°C for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at a speed of 5000rpm for 30s; Move the substrate to a heating plate at 90°C to dry for 10 minutes; quickly heat to 270°C and bake for 4 minutes; finally divide the prepared substrates into three groups, and anneal at 500°C for 20 minutes; obtain ferroelectric multifunctional film. The ferroelectric properties of the film were analyzed.

[0082] as attached Figure 5 Shown...

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Abstract

The invention belongs to the fields of condensed matter physics, functional thin films and nanotechnology, and relates to a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof. The molecular formula of the two-dimensional layered perovskite ferroelectric multifunctional film is: yBi 2 o x -BiMeO 3 , wherein, 2≤x≤4; 1≤y≤4; Me is a transition metal. The perovskite structure Bi 2 o x and perovskite structure BiMeO 3 Their crystal structures are similar and their lattice constants match, with a stable tetragonal-like supercell structure. The preparation process is as follows: first prepare a precursor solution with a ratio of Bi to Me of 1-6 and a molar concentration of 0.1-0.4M; after spin coating, drying, pyrolysis, and annealing, a two-dimensional layered perovskite ferroelectric multilayer Functional film. The invention adopts the crystal structure design and the sol-gel synthesis method to develop a new structure thin film, the composition of the precursor liquid is precisely controllable and the synthesis conditions are simple, and finally a high-quality ferroelectric thin film with excellent performance is obtained.

Description

technical field [0001] The invention belongs to the fields of condensed matter physics, functional thin films and nanotechnology, and specifically relates to a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof. Background technique [0002] Whether ferroelectric materials can maintain their ferroelectricity in low dimensions has always been a scientific issue that has attracted much attention. The phenomenological theory in the 1980s believed that the polarization properties of ferroelectric materials gradually changed from three-dimensional to two-dimensional as the size decreased, and their polarization ability gradually decreased or even disappeared in the direction of size reduction. This is the so-called "size effect". The appearance of the size effect is due to the induced charge on the surface of the material, which generates a depolarization field and weakens the polarization characteristics of the material....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L21/02
CPCH01L21/02521H01L31/032
Inventor 张林兴丁佳麒杨倩倩田建军
Owner UNIV OF SCI & TECH BEIJING
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