Silicon phosphide crystal dense tube synthesis and target material production method

Abstract

The invention relates to the technical field of silicon phosphide crystal dense tube synthesis and target material production, and discloses a silicon phosphide crystal dense tube synthesis and target material production method which comprises the following steps: accurately weighing silicon powder with the purity of 99.999% and red phosphorus with the purity of 99.999%, filling into a quartz tube, sealing the quartz tube, heating the quartz tube in a synthesis furnace to 800-1200 DEG C, and preserving heat for 6-16 hours; synthesizing the single-phase silicon phosphide crystal with the purity of 99.995%; ball-milling the product into powder of 500-800 meshes, filling the powder into a graphite mold, carrying out hot pressed sintering for 5-10 hours in a vacuum hot pressing furnace under the conditions that the mechanical pressure is 10-25 MPa, the temperature is 1000-1300 DEG C and the argon atmosphere is 0.01 MPa, cooling, taking out a silicon phosphide target blank, and carrying out machining and ultrasonic cleaning to obtain the silicon phosphide target material. The relative density of the target material is greater than 95%, the purity is greater than 99.995%, the target material is in a single phase, the grain size is smaller than 50 microns, and the target material is suitable for preparing a silicon phosphide two-dimensional material by adopting a physical deposition method.

Description

technical field [0001] The application relates to the technical field of silicon phosphide crystal close-tube synthesis and its target material production, more specifically, it relates to the synthesis of silicon phosphide crystal close-tube synthesis and its target material production method. Background technique [0002] Silicon phosphide is a group IV-V compound. Silicon phosphide crystal is a new type of two-dimensional material. Its structure is similar to two-dimensional materials such as layered graphite and molybdenum disulfide. The layers are connected by strong forces; the layers are connected by van der Waals forces, and the layers are connected by weak intermolecular forces. In recent years, two-dimensional materials have become a research hotspot in material science, but several two-dimensional materials that are currently studied have obvious shortcomings that limit their applications in the field of microelectronics and other fields, such as graphene. The pr...

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Problems solved by technology

In recent years, two-dimensional materials have become a research hotspot in material science, but several two-dimensional materials that are currently studied have obvious shortcomings that limit their applications in the field of microelectronics and other fields, such as graphene. Zero band gap and easy agglomeration; molybdenum disulfide has low room temperature carrier mobility and easy deliquescence in humid environment, etc.