Laminated ceramic sintered body substrate, electronic device, chip resistor, and manufacturing method
A technology for electronic devices and sintered bodies, which is used in the manufacture of resistors, resistors, thin film resistors, etc., and can solve problems such as unevenness, uneven film thickness, surface electrodes, and difficulty in stabilizing the shape of the resistor body.
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Embodiment 1
[0078] The ceramic sintered body substrate is fabricated by the following manufacturing method.
[0079] First, an alumina substrate excellent in heat resistance, excellent in insulation is excellent, and an inexpensive aluminum oxide substrate is excellent in heat resistance.
[0080] A planarizing film is formed as described above on the ceramic sintered body substrate. First, an AlN nanoparticle (NN120, Merck Co., Ltd.) is added to the ALN nanoparticles (100 nm of central particle diameter, by a scanning electron microscope (SEM) observation by a scanning electron microscope (SEM). And stirred to make uniformly dispersed, thereby preparing a solution for forming a planarization film. Then, a solution of the planarization film was treated with a solution of 3000 rpm for 20 seconds using a spin coater. Thereafter, the heat plate set to 100 ° C was dried for 30 seconds, and then, the electric drying furnace was used for 12 hours by the electric drying furnace to form an aln nanopa...
Embodiment 2
[0083] For a laminated ceramic sintered body substrate made in Example 1, a slice resistor or the like is formed, and a slice resistor is formed.
[0084] By sputtering, a film made of Nicralsi alloy is fabricated on a planned film of a laminated ceramic sintered body substrate. Next, a photolithography (coating resist, drying, exposure, development, etching, and resist stripping) The pattern forming the above film is machined into a zigzible structure, and the resistor is obtained. Thereafter, in order to obtain a given resistance temperature coefficient (TCR), a heat treatment was carried out at 300 ° C for 5 hours.
[0085] Further, an upper electrode is formed as described above on the above planarization film. First, the film formation of the CUNI alloy film was performed by a sputtering method on the planarization film, followed by the foregoing photolithography. It is possible to substituting the photolithography method to form a film by a metal mask by a metal mask, by a m...
Embodiment 3
[0091] In order to evaluate the effect of the above-mentioned blade resistor, the thermal simulation is carried out. Use ANSYS (ANSYS) as analog software.
[0092] The thermal simulation is carried out in a state where the sheet resistor is mounted to the Cu pad pattern on the printed substrate by solder. The slice resistor has a size of 1 mm × 0.5 mm × 0.3 mm. The main structure of the sheet resistor is the same as in Example 2. Specifically, the aluminum oxide substrate is used as the ceramic sintered body substrate, and the film thickness of the planarization film on the alumina substrate is 5 μm and the thermal conductivity is 120 w / (m · k). The film thickness of the resistor on the flat film is 1 μm and the thermal conductivity is 120 W / (m · k), and the CUNI is used as the upper electrode, and Ni is used as the end electrode. Further, Example 3 is different from that of Example 2, and there is no lower electrode, but there is no need to have a large amount of heat of the ...
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Abstract
Description
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