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Growth method of zinc selenide crystal

A growth method, zinc selenide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high vapor pressure, complex process, large dislocation and stress, etc., and achieve fast crystal growth speed and process Simple, large single crystal size effect

Pending Publication Date: 2022-02-22
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The melting point of zinc selenide is 1526°C. At high temperature, the vapor pressure of the two components of selenium and zinc is very large, and the thermal conductivity of the crystal is low. When zinc selenide is prepared by the melt method, it needs to be grown in a high-temperature and high-pressure container, and the cost is extremely high, and the crystal The composition deviates from the stoichiometric ratio, the dislocation and stress are large, and the crystal quality is not high
Growth of zinc selenide single crystal by physical vapor deposition method has slow growth rate, high dislocation density and complex process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Step 1, processing the CVD zinc selenide polycrystalline plate into a flat plate with a 15° cone angle at one end;

[0027] Step 2: The heater starts to move from one end of the ZnSe polycrystalline plate's cone angle at a moving speed of 1mm / h, the heater temperature is 800°C, and the growth atmosphere is nitrogen until the ZnSe crystal growth is completed.

[0028] After testing, zinc selenide is a single crystal, without bubble defects, and the dislocation density is 3500cm -2 .

Embodiment 2

[0030] Step 1, processing the CVD zinc selenide polycrystalline plate into a flat plate with a 45° cone angle at one end;

[0031] Step 2: The heater starts to move from one end of the ZnSe polycrystalline plate's cone angle at a moving speed of 0.5mm / h, the temperature of the heater is 700°C, and the growth atmosphere is vacuum until the ZnSe crystal growth is completed.

[0032] After testing, zinc selenide is a single crystal, without bubble defects, and the dislocation density is 5000cm -2 .

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Abstract

The invention discloses a growth method of a zinc selenide crystal. The growth method comprises the steps of 1, processing a zinc selenide polycrystalline plate into a flat plate with a taper angle at one end; and 2, enabling a heater to start to move from one end of the taper angle of the zinc selenide polycrystalline plate until the growth of the zinc selenide crystal is completed. The growth method of the zinc selenide crystal is simple in process, the growth speed of the crystal is high, and the prepared single crystal is large in size.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a method for growing zinc selenide crystals. Background technique [0002] Zinc selenide single crystal is an important wide-bandgap compound semiconductor material, which has important application prospects in the fields of blue semiconductor light-emitting devices, nonlinear optical devices, nuclear radiation detectors, and near-ultraviolet-visible light detectors. ZnSe single crystals doped with transition metals are often used as infrared laser crystal materials for direct pumping to generate mid-infrared laser output. Zinc selenide laser gain medium has the advantages of low phonon ability, long fluorescence lifetime, wide tuning band, etc. It has broad application prospects in laser interference, laser ranging, laser medical treatment, environmental monitoring and other fields. [0003] The melting point of zinc selenide is 1526°C. At high temperature, the vapor pressure...

Claims

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Application Information

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IPC IPC(8): C30B23/02C30B29/48
CPCC30B23/02C30B29/48
Inventor 狄聚青于金凤
Owner 安徽光智科技有限公司
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