Silicon-based negative electrode material and preparation method and application thereof
A technology of silicon-based negative electrode materials and silicon crystals, which is applied in the direction of negative electrodes, battery electrodes, and active material electrodes, can solve the problems of low initial efficiency, large volume expansion, and poor cycle performance, so as to reduce the occurrence of side reactions and improve Effects of conductivity, improvement of cycle performance and efficiency
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Embodiment 1
[0068]This embodiment provides a silicon-based negative electrode material, which includes an inner core, a first carbon coating layer coated on the surface of the inner core, and a second carbon coating layer coated on the surface of the first carbon coating layer ;
[0069] The inner core includes a solid part and a porous part sequentially from the inside to the outside, and the inner core includes silicon grains and silicon-oxygen materials.
[0070] The preparation method of the silicon-based negative electrode material is as follows:
[0071] (1) The raw material SiO 1.2 The powder is put into the reaction furnace, acetylene gas is passed through, the temperature is raised to 800°C, and the gas phase coating is carried out to obtain the silicon oxide C-SiO containing the first carbon coating layer. 1.2 , the measured carbon content is 2.3%;
[0072] (2) the C-SiO in step (1) 1.2 Heat treatment at 1000°C for 10 hours under argon atmosphere, and cool to room temperatur...
Embodiment 2
[0084] This embodiment provides a silicon-based negative electrode material, which includes an inner core, a first carbon coating layer coated on the surface of the inner core, and a second carbon coating layer coated on the surface of the first carbon coating layer ;
[0085] The inner core includes a solid part and a porous part sequentially from the inside to the outside, and the inner core includes silicon grains and silicon-oxygen materials.
[0086] The preparation method of the silicon-based negative electrode material is as follows:
[0087] (1) The raw material SiO 1.2 The powder is put into the reaction furnace, acetylene gas is passed through, the temperature is raised to 800°C, and the gas phase coating is carried out to obtain the silicon oxide C-SiO containing the first carbon coating layer. 1.2 , the measured carbon content is 2.3%;
[0088] (2) the C-SiO in step (1) 1.2 Heat treatment at 1000°C for 5 hours under argon atmosphere, and cool to room temperatur...
Embodiment 3
[0094] This embodiment provides a silicon-based negative electrode material, which includes an inner core, a first carbon coating layer coated on the surface of the inner core, and a second carbon coating layer coated on the surface of the first carbon coating layer ;
[0095] The inner core includes a solid part and a porous part sequentially from the inside to the outside, and the inner core includes silicon grains and silicon-oxygen materials.
[0096] The preparation method of the silicon-based negative electrode material is as follows:
[0097] (1) The raw material SiO 1.2 The powder is put into the reaction furnace, acetylene gas is introduced, the temperature is raised to 700°C, and the gas phase coating is carried out to obtain the silicon oxide C-SiO containing the first carbon coating layer. 1.2 , the measured carbon content is 2.7%;
[0098] (2) the C-SiO in step (1) 1.2 Heat treatment at 950°C for 5 hours under argon atmosphere, and cool to room temperature wit...
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Abstract
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