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Method for improving heat dissipation performance of blue and green light semiconductor laser

A technology of heat dissipation performance and semiconductor, applied in the direction of semiconductor lasers, lasers, laser parts, etc., can solve the problems such as the problem of heat dissipation of the substrate cannot be effectively solved, the volume power density of related microwave power devices is increased, etc., and the yield is high. , low cost, and the effect of improving thermal conductivity

Pending Publication Date: 2022-03-04
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the reduction in volume and increase in power density of related microwave power devices, thermal management has become one of the main technical bottlenecks restricting the further development of the integrated circuit industry.
The performance of blue and green semiconductor lasers is limited by the low thermal conductivity of the substrate, and the heat dissipation problem of traditional silicon and sapphire substrates cannot be effectively solved

Method used

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  • Method for improving heat dissipation performance of blue and green light semiconductor laser
  • Method for improving heat dissipation performance of blue and green light semiconductor laser

Examples

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Embodiment 1

[0034]This embodiment provides a blue and green laser whose substrate is filled with diamond material, including undoped GaN or n-GaN layered on a diamond-filled GaN or SiC (n-Type) substrate sequentially from bottom to top. Growth epitaxial layer, n-AlGaN or n-AlGaN / n-GaN superlattice lower confinement layer, undoped InGaN or n-InGaN lower waveguide layer or n-InGaN / n-GaN lower double waveguide layer, low temperature undoped GaN or undoped InGaN insertion layer, InGaN / GaN or InGaN / InGaN quantum well structure, undoped GaN or undoped InGaN upper protection layer, undoped InGaN upper waveguide layer or undoped InGaN / GaN upper double waveguide layer, p-AlGaN or p-AlGaN / p-GaN superlattice electron blocking layer, p-AlGaN or p-AlGaN / p-GaN superlattice upper confinement layer, polarization-induced p-AlGaN or p-NiO epitaxial layer , p++-GaN or p-InGaN ohmic contact layer.

[0035] The blue and green lasers whose substrate is filled with diamond materials are prepared through the fo...

Embodiment 2

[0054] This embodiment provides a blue and green laser whose substrate is filled with diamond material, including undoped GaN or n-GaN layered on a diamond-filled GaN or SiC (n-Type) substrate sequentially from bottom to top. Growth epitaxial layer, n-AlGaN or n-AlGaN / n-GaN superlattice lower confinement layer, undoped InGaN or n-InGaN lower waveguide layer or n-InGaN / n-GaN lower double waveguide layer, low temperature undoped GaN or undoped InGaN insertion layer, InGaN / GaN or InGaN / InGaN quantum well structure, undoped GaN or undoped InGaN upper protection layer, undoped InGaN upper waveguide layer or undoped InGaN / GaN upper double waveguide layer, p-AlGaN or p-AlGaN / p-GaN superlattice electron blocking layer, p-AlGaN or p-AlGaN / p-GaN superlattice upper confinement layer, polarization-induced p-AlGaN or p-NiO epitaxial layer , p++-GaN or p-InGaN ohmic contact layer.

[0055] The blue and green lasers whose substrate is filled with diamond materials are prepared through the f...

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Abstract

The invention discloses a method for improving the heat dissipation performance of blue and green light semiconductor lasers. The diamond embedded substrate is obtained by punching the blind hole or the through hole in the substrate and introducing the diamond into the hole, so that the heat conduction capability of the substrate is remarkably improved. And a blue and green laser vertical structure is epitaxially grown on the substrate, so that the blue and green laser with strong heat dissipation and high efficiency is obtained. The treatment method has the advantages of being stable in process, low in cost, high in yield, simple in equipment, easy to operate, suitable for industrial production and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for improving the heat dissipation performance of blue and green lasers by filling a substrate with diamond material. Background technique [0002] Gallium nitride GaN and its alloys have good application prospects in the fields of 5g communications, aerospace, and national defense technology due to their large band gap and high electron mobility. With the reduction in volume and increase in power density of related microwave power devices, thermal management has become one of the main technical bottlenecks restricting the further development of the integrated circuit industry. The performance of blue and green semiconductor lasers is limited by the low thermal conductivity of the substrate, and the heat dissipation problem of traditional silicon and sapphire substrates cannot be effectively solved. As the material with the highest thermal conductivity (up...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/024H01S5/34H01S5/343C23C16/40C23C16/50C30B25/02C30B29/04
CPCH01S5/02484H01S5/34346H01S5/3425C23C16/50C23C16/402C30B25/02C30B29/04
Inventor 王新强黄振杨嘉嘉陶仁春沈波
Owner PEKING UNIV
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