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Carbon nanotube cold cathode electron source and alignment welding method thereof

A carbon nanotube and welding method technology, which is applied in the field of carbon nanotube cold cathode electron source and its alignment welding, can solve the problems of shortened life, shedding of substrate, and quality of emitted electron beam, etc., and achieves the effect of reducing shedding

Active Publication Date: 2022-03-11
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The carbon nanotubes in the above-mentioned patents have limited adhesion to the substrate. During the field electron emission process of the cold cathode material, the carbon nanotubes are easily detached from the substrate under the action of a strong electric field force, resulting in fluctuations and attenuation of the field emission current. , which in turn leads to a decline in the quality of the emitted electron beam and a shortened lifespan, which has many adverse effects on the control of the back end, making it more difficult to develop high-end cold cathode products

Method used

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  • Carbon nanotube cold cathode electron source and alignment welding method thereof
  • Carbon nanotube cold cathode electron source and alignment welding method thereof
  • Carbon nanotube cold cathode electron source and alignment welding method thereof

Examples

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Embodiment 1

[0087] This embodiment provides a method for parasite welding of a carbon nanotube cold cathode electron source, and the parasite welding method includes the following steps:

[0088] (1) Take a circular stainless steel with a diameter of 10 mm and a thickness of 500 μm polished on one side as the first substrate, ultrasonically clean it with acetone and isopropanol for 15 minutes, and dry it with nitrogen; spin coat a layer of electron beam glue , developed by electron beam etching process, and etched at the center of the first substrate to expose an elliptical region with a long axis of 1000 μm to 2000 μm and a short axis of 250 μm to 1000 μm; using metal Al and Fe as deposition sources, electron beam evaporation Plating technology vapor-deposits 10nm-thick Al and 2nm-thick Fe in the central area of ​​the first substrate as the catalyst layer required for the growth of carbon nanotubes, and then removes excess electron beam glue; finally puts the first substrate with the cata...

Embodiment 2

[0096] This embodiment provides a parasite welding method for a carbon nanotube cold cathode electron source, except that in step (1), a circular array with a diameter of 60 μm and a pitch of 100 μm is etched at the center of the first substrate , which generally occupy the long axis of 1000 μm ~ 2000 μm, except for the elliptical region of 250 μm ~ 1000 μm short axis, the rest are the same as in Example 1.

[0097] The carbon nanotube cold cathode electron source obtained in this embodiment is a carbon nanotube array cold cathode electron source, and its schematic diagram is as follows Figure 11 As shown, its SEM image is shown in Figure 12 It can be seen that the morphology of the carbon nanotubes can still maintain the complete morphology before welding after the cold cathode electron source of the carbon nanotube thin film is welded. The carbon nanotube array cold cathode electron source includes a cathode substrate 9 and a carbon nanotube array 10 welded on the surface...

Embodiment 3

[0099] This embodiment provides a method for parasite welding of a carbon nanotube cold cathode electron source, and the parasite welding method includes the following steps:

[0100] (1) Take a circular stainless steel with a diameter of 10 mm and a thickness of 800 μm polished on one side as the first substrate, ultrasonically clean it with acetone and isopropanol for 15 minutes, and dry it with nitrogen; spin coat a layer of electron beam glue , developed by electron beam etching process, etched in the center of the first substrate to expose a circular area with a diameter of 1.2mm; using metal Al and Fe as deposition sources, using electron beam evaporation technology to evaporate the central area of ​​the first substrate 0.8nm thick Al and 0.2nm thick Fe are used as the catalyst layer required for the growth of carbon nanotubes, and then the excess electron beam glue is removed; finally, the first substrate evaporated with the catalyst layer is put into the plasma chemical...

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Abstract

The invention provides a carbon nanotube cold cathode electron source and an alignment welding method thereof, and the alignment welding method comprises the steps: carrying out the alignment welding of a first substrate with a carbon nanotube growing on the surface and a third substrate coated with a bonding layer through a first mold through a specific second mold, firm welding of the carbon nanotubes with complete morphology at the center position of the cathode substrate is realized, and falling of the carbon nanotubes from the substrate is reduced; the carbon nanotube cold cathode electron source obtained through the alignment welding method has high stability and long service life, and convenience is provided for electron beam direction control of electron sources in vacuum devices such as an X-ray tube and a microwave tube.

Description

technical field [0001] The invention relates to the technical field of vacuum electronics, in particular to a carbon nanotube cold cathode electron source and a parasite welding method thereof. Background technique [0002] Carbon nanotubes have unique electrical properties such as high conductivity, high temperature resistance, and large aspect ratio, and are widely used in batteries, energy storage, and electron sources. The minimum diameter of carbon nanotubes can reach less than 1nm, and the axial length increases with the increase of growth time, which can reach hundreds of microns or even centimeters. This unique geometric structure endows carbon nanotubes with high aspect ratio characteristics. It is beneficial for the electric field to realize local electric field enhancement at the tip, so that the electrons inside the carbon nanotube can escape into the vacuum under a lower electric field. As an electron source material, a single carbon nanotube theoretically has ...

Claims

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Application Information

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IPC IPC(8): H01J9/02H01J9/18H01J1/304B82Y30/00B82Y10/00
CPCH01J9/025H01J9/18H01J1/3044B82Y10/00B82Y30/00
Inventor 戴庆李振军刘新川李驰白冰
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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