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Schottky contact groove type power diode and preparation method thereof

A Schottky contact and power diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of sacrificing device on-resistance and chip area utilization, and achieve low on-resistance and small leakage Current, the effect of good reverse withstand voltage characteristics

Pending Publication Date: 2022-03-11
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the device is forward biased, the trench MOS structure cannot participate in conduction, which will inevitably lead to the sacrifice of the device's on-resistance and chip area utilization.

Method used

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  • Schottky contact groove type power diode and preparation method thereof
  • Schottky contact groove type power diode and preparation method thereof
  • Schottky contact groove type power diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 As shown, a Schottky-contact trench power diode of the present invention includes an n-type drift layer 101 , an n-type substrate 100 and a lower electrode 103 stacked sequentially from top to bottom. Several ribs 104 extend upward from the upper end of the n-type drift layer 101 , and grooves are formed between the ribs 104 . A high barrier layer 202 is laid in the trench, and the high barrier layer 202 is in Schottky contact with the n-type drift layer 101 . A low barrier layer 201 is laid on the rib 104 to cover the upper end surface of the rib 104 and the end of the high barrier layer 202 , and the low barrier layer 201 and the n-type drift layer 101 are also in Schottky contact. The upper electrode 102 is set to fill and cover the surfaces of the high barrier layer 202 and the low barrier layer 201 .

[0047] In this embodiment, the n-type drift layer 101 is made of gallium oxide, and the n-type substrate 100 is also made of gallium oxide, but th...

Embodiment 2

[0068] Such as Figure 9 As shown, compared with Embodiment 1, the structural difference is mainly that an insulating dielectric layer 203 is provided at the corner of the groove bottom and the rib 104 to alleviate the electric field concentration effect: the electric field has a maximum value at the corner of the groove bottom and the rib 104, and by introducing The insulating dielectric layer optimizes the distribution of the electric field and reduces the value of the electric field at the corner, thereby improving the breakdown characteristics of the device. The insulating dielectric layer 203 is located between the high barrier layer 202 and the n-type drift layer 101 , disconnecting the electrical contact there.

[0069] The preparation method is also adjusted on the basis of Example 1: before depositing the high barrier layer 202, first deposit the insulating dielectric layer 203 at the bottom of the trench, and make the insulating dielectric layer 203 cover the lower e...

Embodiment 3

[0071] Such as Figure 10 As shown, corresponding to the second embodiment, the structural difference mainly lies in that the insulating dielectric layer 203 covers the bottom of the trench entirely except for the corners. The electrical contact between the high barrier layer 202 at the lower part of the trench and the n-type drift layer 101 is completely disconnected.

[0072] Compared with the second embodiment, the preparation method is all about covering the bottom and corners of the trench when depositing the insulating dielectric layer 203 .

[0073] Compared with Embodiment 2, Embodiment 3 sacrifices part of the conduction area, but there is one less etching step in the preparation process, which reduces the cost, and the insulating dielectric layer in the two device structures has played a role in alleviating the electric field concentration effect and improving The effect of device breakdown characteristics, other electrical characteristics are not significantly diff...

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Abstract

The invention discloses a Schottky contact groove type power diode and a preparation method thereof, relates to the field of semiconductor devices, and provides the scheme for overcoming the defects that the on resistance of a device and the chip area utilization rate are sacrificed due to the fact that a groove MOS structure cannot participate in conduction. The n-type substrate is in ohmic contact with the lower electrode; a plurality of ribs extend from one side, far away from the n-type substrate, of the n-type drift layer; a high-potential barrier layer is laid between the ribs, and a low-potential barrier layer is also arranged to cover the end part of the high-potential barrier layer and the end surfaces of the ribs; and an upper electrode is arranged to fill and cover the surfaces of the low-barrier layer and the high-barrier layer. The semiconductor device has the advantages that the high-barrier layer which can form a high-barrier Schottky junction with an n-type drift layer material is arranged, the high-barrier Schottky junction has relatively small leakage current during reverse biasing, ribs between grooves can be pinched off by widening of a depletion region of the high-barrier Schottky junction, electric leakage of a low-barrier Schottky junction is effectively blocked, and the good reverse voltage withstanding characteristic is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a schottky contact trench type power diode and a preparation method thereof. Background technique [0002] Schottky Barrier Diode (SBD) has outstanding advantages such as low turn-on voltage and fast switching speed, and is an important power semiconductor device. At present, based on some ultra-high pressure resistant materials (such as Ga 2 o 3 ) of the Schottky barrier diode device is not enough to give full play to the advantages of its material, especially the reverse withstand voltage of the device is far from its theoretical extreme value, mainly due to the high density at the Schottky junction interface The surface electric field causes the reverse leakage of the device to be too large. [0003] A trench MOS type vertical gallium oxide Schottky barrier diode has been reported in the literature. Its working principle is to use the depletion effect of the trench MOS ...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/8725H01L29/0638H01L29/0684H01L29/66143
Inventor 裴艳丽方湃文卢星陈梓敏王钢
Owner SUN YAT SEN UNIV
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