Method for improving ionization rate in vapor deposition process by using vacuum ultraviolet light

A vacuum ultraviolet light and vapor deposition technology, applied in the field of vapor deposition, can solve the problems of high cost, increased design difficulty and design cost, poor versatility, etc.

Pending Publication Date: 2022-03-15
ANHUI UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

[0006] The purpose of the present invention is to solve the problems of high cost, complex structure, increased design difficulty and design cost, and poor versatility of the existing method for improving the ionization rate of gas-phase reaction ions, and provides a method that uses vacuum ultraviolet light to improve the vapor-phase deposition process. ionization rate method

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  • Method for improving ionization rate in vapor deposition process by using vacuum ultraviolet light

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Embodiment 1

[0031] Such as figure 1 As shown, a method of using vacuum ultraviolet light to realize the ionization rate in vapor deposition according to the present invention, it is the gas phase atomic distribution of Ti in the vapor deposition chamber comprising a set of vacuum ultraviolet ionization light source, after vacuum ultraviolet ionization Schematic diagram of the distribution of Ti+ gas phase ions. Specifically including 101-vacuum vapor deposition chamber; 102-deuterium lamp vacuum ultraviolet light source with a peak wavelength of 165nm; 103-vacuum ultraviolet light beam with a peak wavelength of 165nm; 104-Ti gas phase atoms; 105-Ti+ gas phase ions; 106-workpiece to be coated .

[0032] Specifically, in the vacuum vapor deposition chamber 101, a deuterium lamp vacuum ultraviolet light source 102 with a peak wavelength of 165nm is added; after being powered on, it can emit a vacuum ultraviolet light beam 103 with a peak wavelength of 165nm. The photon energy of the ultra...

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Abstract

The invention relates to the technical field of vapor deposition, in particular to a method for improving the ionization rate of a vapor deposition process by using vacuum ultraviolet light, which is characterized in that the vacuum ultraviolet light is used for carrying out photoelectric ionization on vapor phase particles (or atoms on the surface of a solid phase target material) in the vapor deposition process, so that the ionization rate of the vapor phase/solid phase particles is improved; according to the method for improving the ionization rate of the vapor deposition process by using the vacuum ultraviolet light, the improvement amplitude of the ionization rate of vapor deposition particles in an irradiation area of the vacuum ultraviolet light source can be effectively controlled by controlling the output power of the vacuum ultraviolet light source; by controlling the output power density of the vacuum ultraviolet light source, the improvement amplitude of the ionization rate of vapor deposition particles in unit volume can be effectively controlled.

Description

technical field [0001] The invention relates to the technical field of vapor deposition, in particular to a method for increasing the ionization rate of the vapor deposition process by using vacuum ultraviolet light. Background technique [0002] In the process of preparing thin films by vapor deposition, a high ionization rate is an important prerequisite for effective control of ion beam energy, direction, density, and distribution. The existing technical means to increase the ionization rate have brought various problems, such as the temperature rise of the coating substrate (such as arc plating), large particles (such as arc plating), and low deposition rates (such as high-power pulse magnetron sputtering, that is, HiPIMS), high cost (such as HiPIMS, laser arc plating - requires a separate pulse laser and related supporting power supply, etc.), etc. [0003] For physical vapor deposition technology, it mainly includes magnetron sputtering technology, vacuum evaporation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/35C23C16/452
CPCC23C14/325C23C14/354C23C16/452
Inventor 郑军刘兴光王启民赵栋才张林
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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