Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of thermal insulation hard felt for silicon carbide single crystal growth furnace

A silicon carbide single crystal and growth furnace technology, which is applied in the field of carbon felt preparation, can solve the problems of easy cracks, unstable thermal insulation performance, poor thermal insulation performance, etc.

Active Publication Date: 2022-03-22
佛山市石金科技有限公司
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]Based on this, in order to solve the problem of unstable thermal insulation performance, poor thermal insulation performance and easy occurrence of long-term use of the silicon carbide single crystal growth furnace thermal insulation hard felt in the prior art In order to solve the problem of cracks, the present invention provides a method for preparing a silicon carbide single crystal growth furnace insulation rigid felt. The specific technical scheme is as follows:

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of thermal insulation hard felt for silicon carbide single crystal growth furnace
  • Preparation method of thermal insulation hard felt for silicon carbide single crystal growth furnace
  • Preparation method of thermal insulation hard felt for silicon carbide single crystal growth furnace

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] A method for preparing a silicon carbide single crystal growth furnace insulation rigid felt in an embodiment of the present invention comprises the following steps:

[0023] Carrying out the first pretreatment of the carbon fiber felt matrix, and then placing it in a carbonization furnace for the first carbonization treatment to obtain a carbonized felt;

[0024] preparing a treatment solution and performing a second pretreatment on the treatment solution to obtain a pretreatment solution;

[0025] The carbonized felt is subjected to cutting treatment, after the mold is fixed, the pretreatment liquid is sprayed, and then through curing treatment, second carbonization treatment and mechanical processing, the silicon carbide single crystal growth furnace insulation rigid felt is obtained.

[0026] In one embodiment, the first pretreatment is to ultrasonically clean the carbon fiber felt base, and then treat it at 75°C-95°C for 5h-8h.

[0027] In one embodiment, the temp...

Embodiment 1

[0042] A method for preparing a silicon carbide single crystal growth furnace insulation hard felt, comprising the following steps:

[0043] After the carbon fiber felt matrix is ​​ultrasonically cleaned, it is treated at 95°C for 5 hours, and then placed in a carbonization furnace at a temperature of 1200°C for 12 hours for the first carbonization treatment to obtain a carbonized felt;

[0044] Mix 35 parts of phenolic resin, 15 parts of epoxy resin, 1 part of cellulose, 0.3 part of graphite powder, 0.01 part of polyoxyethylene ether and 2 parts of hexamethylenetetramine, and ball mill at a speed of 1500r / min 45min, then treat for 3min under the condition of pressure of 0.3MPa to get the pretreatment solution;

[0045] The carbonized felt is subjected to cutting treatment, after the mold is fixed, according to the mass ratio of the carbonized felt to the pretreatment liquid is 1:2, the pretreatment liquid is sprayed on the carbonized felt, and then heated at a temperature of ...

Embodiment 2

[0048] A method for preparing a silicon carbide single crystal growth furnace insulation hard felt, comprising the following steps:

[0049] After the carbon fiber felt matrix is ​​ultrasonically cleaned, it is treated at 85°C for 6 hours, and then placed in a carbonization furnace at a temperature of 1600°C for the first carbonization treatment for 20 hours to obtain a carbonized felt;

[0050] Mix 20 parts of phenolic resin, 36 parts of epoxy resin, 1.2 parts of cellulose, 0.4 part of graphite powder, 0.02 part of polyoxyethylene ether and 2 parts of ethyl sulfate, and ball mill for 40 minutes at a speed of 1200 r / min, and then Treat for 2 minutes at a pressure of 0.5MPa to obtain a pretreatment solution;

[0051]Carry out the cutting process of the carbonized felt, after the mold is fixed, according to the mass ratio of the carbonized felt and the pretreatment liquid is 1:2, spray the pretreatment liquid on the carbonized felt, and then at a temperature of 125 Curing treat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Bulk densityaaaaaaaaaa
Tensile strengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a thermal insulation hard felt for a silicon carbide single crystal growth furnace, which comprises the following steps: carrying out first pretreatment on a carbon fiber felt matrix, and carrying out first carbonization treatment in a carbonization furnace to obtain a carbonized felt; preparing a treatment solution, and carrying out second pretreatment on the treatment solution to obtain a pretreatment solution; and cutting the carbonized felt, fixing a mold, spraying a pretreatment solution, and carrying out curing treatment, secondary carbonization treatment and machining to obtain the heat-preservation hard felt for the silicon carbide single crystal growth furnace. By optimizing the formula of the treating fluid and optimizing the process steps and the process parameters, the obtained heat preservation hard felt for the silicon carbide single crystal growth furnace has the advantages of stable heat preservation performance, excellent heat insulation performance and long service life.

Description

technical field [0001] The invention relates to the field of carbon felt preparation, in particular to a method for preparing a silicon carbide single crystal growth furnace insulation rigid felt. Background technique [0002] The commonly used thermal insulation material for silicon carbide single crystal growth furnace is soft viscose-based carbon felt. Its main function is to maintain the heat of the heater, form a suitable temperature field, reduce heat energy loss, and reduce operating power. At present, traditional felt insulation materials are mostly used in silicon carbide single crystal growth furnaces, but traditional felt insulation materials have problems such as low operating temperature, poor heat insulation performance, brittleness at high temperatures, and unstable heat preservation performance, especially for long periods of time. After use, cracks are prone to appear, resulting in a significant reduction in the performance of felt insulation materials and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/83C04B35/52C04B35/622
CPCC04B35/83C04B35/52C04B35/622C04B2235/6562C04B2235/6567C04B2235/77C04B2235/96C04B2235/9607
Inventor 龙晟侯振华黎俊秀周绪成
Owner 佛山市石金科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products