Quenching and restoring circuit of silicon-based single-photon detector and control method of quenching and restoring circuit

Abstract

The invention discloses a quenching and restoring circuit of a silicon-based single-photon detector and a control method of the quenching and restoring circuit, the quenching and restoring circuit of the silicon-based single-photon detector is provided with a total input end and a total output end, and the quenching and restoring circuit of the silicon-based single-photon detector comprises a bias power supply, a high-speed driver, a negative deviation clamping sub-circuit, a PMOS (P-channel Metal Oxide Semiconductor) tube and an NMOS (N-channel Metal Oxide Semiconductor) tube, a large voltage pulse signal can be generated at the total output end to improve the detection efficiency of the silicon-based single-photon detector, and the NMOS tube and the PMOS tube alternately work, so that the whole quenching and restoring circuit has low static power consumption, the service life is prolonged, and the cost is reduced. And the obtained higher switching speed and shorter turn-on and turn-off time are beneficial to reducing dark counting and detecting dead zone time and improving the counting rate of the silicon-based single-photon detector, so that the method can be suitable for quenching and recovery of the silicon-based single-photon detector in a gating mode and an active mode, and is higher in universality.

Description

technical field [0001] The invention relates to the technical field of photoelectric detectors, and specifically discloses a silicon-based single-photon detector quenching and recovery circuit and a control method thereof. Background technique [0002] Compared with InGaAs single-photon detectors, silicon single-photon detectors have the advantages of low dark count rate and short detection dead time, but the device structure and the technology adopted determine the breakdown voltage V of near-infrared silicon single-photon detectors. BR As many as hundreds of thousands of volts, which also means that to achieve high near-infrared single-photon detection efficiency, a voltage tens of volts higher than the breakdown voltage needs to be added. but continues to increase well above the device breakdown voltage V BR The continuous high power consumption of the device can easily lead to damage to the device. Therefore, single-photon detectors need to be combined with correspondi...

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Problems solved by technology

[0006] In view of this, the object of the present invention is to provide a silicon-based single photon detector quenching and recovery circuit and its control method to solve the problem of resistance due to high and low voltage switching by connecting pull-up or pull-down resistors in the prior art. Too small, a large voltage drop forms a transient large current, resulting in high power consumption and damage to the MOSFET, or due to excessive resistance, the RC time constant cannot meet the overbias voltage at the same time. Short turn-on time and short turn-off time lead to silicon-based single-photon detection The problem of low counter count rate

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