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Method for improving electrical performance of InAlN/GaN high electron mobility transistor

A technology with high electron mobility and electrical performance, applied in the field of microelectronics research, can solve problems such as increasing the lattice mismatch between InAlN and GaN, reducing the mobility of two-dimensional electron gas, and breaking the lattice of the barrier layer. Effects of two-dimensional electron gas mobility, reduction of Coulomb field scattering, and reduction of on-resistance

Pending Publication Date: 2022-04-15
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase of Al composition will increase the lattice mismatch between InAlN and GaN, and increasing the thickness of the InAlN barrier layer will increase the strain energy in the barrier layer, both of which will lead to excessive strain energy during the growth process, The lattice of the barrier layer is broken, which causes great difficulties in the epitaxial growth process of the high-quality InAlN barrier layer.
A barrier layer with a flat interface and uniform composition is a necessary condition for improving the mobility of the two-dimensional electron gas, and with the increase of the concentration of the two-dimensional electron gas in the channel, the interface rough scattering and polarization optics in the InAlN / GaN HEMT Enhanced phonon scattering will also cause a decrease in the mobility of the two-dimensional electron gas
Therefore, this method has certain limitations and challenges for electron concentration and mobility enhancement

Method used

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  • Method for improving electrical performance of InAlN/GaN high electron mobility transistor

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Effect test

Embodiment 1

[0037] A method to improve the electrical performance of InAlN / GaN high electron mobility transistors, such as figure 1 As shown, the InAlN / GaN high electron mobility transistor includes a substrate, and the substrate is a Si substrate;

[0038] A GaN buffer layer located above the substrate, the thickness of the GaN buffer layer is 2-4 μm, and the GaN buffer layer is not doped;

[0039] An InGaN back barrier layer located above the GaN buffer layer, the thickness of the InGaN back barrier layer is 2-4nm, and the molar ratio of In is 10-15%;

[0040] A GaN channel layer located above the InGaN back barrier layer, the thickness of the GaN channel layer is 10-30nm;

[0041] An AlN insertion layer located above the GaN channel layer, the thickness of the AlN insertion layer is 0.7-1.5nm;

[0042] An InAlN barrier layer located above the AlN insertion layer, the thickness of the InAlN barrier layer is 5-9nm, and the molar ratio of In is 16-18%;

[0043] A GaN cap layer located ...

Embodiment 2

[0072] A method for improving the electrical performance of an InAlN / GaN high electron mobility transistor differs from the method for improving the electrical performance of an InAlN / GaN high electron mobility transistor provided in Example 1 in that:

[0073] In the prepared InAlN / GaN high electron mobility transistor, the thickness of the GaN buffer layer is 2 μm.

[0074] The thickness of the InGaN back barrier layer is 4 nm, and the molar ratio of In is 12%.

[0075] The GaN channel layer has a thickness of 15 nm.

[0076] The thickness of the AlN insertion layer is 1 nm.

[0077] The thickness of the InAlN barrier layer was 8 nm, and the molar ratio of In was 17%.

[0078] The thickness of the GaN cap layer is 2nm.

[0079] The distance between source and drain L SD is 15 μm.

[0080] Gate length L G , the distance between the gate and the source L GS , the distance between the gate and the drain L GD Both are 5 μm.

Embodiment 3

[0082] A method for improving the electrical performance of an InAlN / GaN high electron mobility transistor differs from the method for improving the electrical performance of an InAlN / GaN high electron mobility transistor provided in Example 1 in that:

[0083] The specific steps include: take 4mL of diluted 0.25mg / mL TFSI solution in the crystallization dish in the air environment, immerse the InAlN / GaN HEMT in the TFSI solution in the crystallization dish and place it in the air environment for 30s, take it out with N 2 Blow dry to complete the organic superacid treatment on the surface of InAlN / GaN HEMT.

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Abstract

The invention relates to a method for improving the electrical property of an InAlN / GaN high-electron-mobility transistor, and the method comprises the steps: carrying out the surface treatment of the prepared InAlN / GaN high-electron-mobility transistor through employing bis (trifluoromethane) sulfonimide under the condition of not changing the structure and material components of a device, and improving the electrical property of the InAlN / GaN high-electron-mobility transistor. The InAlN / GaN high-electron-mobility transistor is soaked in a TFSI solution with a specific concentration for a certain time in an air environment, hydrogen ions in the solution can neutralize part of polarization charges in an InAlN barrier layer, polarization coulomb field scattering is reduced, and therefore the two-dimensional electron gas mobility and device performance of the InAlN / GaN high-electron-mobility transistor are improved.

Description

technical field [0001] The invention relates to a method for improving the electrical performance of an InAlN / GaN high electron mobility transistor, belonging to the technical field of microelectronic research. Background technique [0002] With the continuous development of 5G mobile communications, rail transit, photovoltaic power generation, semiconductor lighting, high-voltage power transmission and transformation and other application fields, wide bandgap semiconductor devices have become a hot spot in current international research and industrialization. GaN is an important representative of wide-bandgap semiconductors. Due to its unique spontaneous and piezoelectric polarization properties, its device structure can realize high-density and high-mobility two-dimensional electron gas (2DEG), which is the key to realizing microwave and power devices. . GaN High Electron Mobility Transistor (HEMT) has the advantages of large current, high power and excellent frequency ch...

Claims

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Application Information

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IPC IPC(8): H01L21/335H01L21/306
CPCH01L29/66462H01L21/30612
Inventor 崔鹏陈思衡林兆军韩吉胜徐现刚
Owner SHANDONG UNIV
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