Edge-emitting type laser element

Abstract

The invention provides an edge-emitting laser element, which comprises a substrate, an n-type buffer layer, a first n-type coating layer, a grating layer, a spacing layer, a lower light limiting unit, an active layer, an upper light limiting unit, a p-type coating layer, a tunneling junction layer and a second n-type coating layer, the tunneling junction layer has the efficacy of blocking the etching process to form the second n-type cladding layer into a predetermined ridge-shaped configuration pattern. After a part of the p-type coating layer is transposed into the n-type coating layer by using the tunnel junction layer, the series resistance of the EEL element is reduced, and the coupling of the light field and the active layer tends to the middle position of the active layer, so that the lower half part of the active layer can be effectively applied, and the light field is closer to the grating layer. The light coupling efficiency of the light field / grating is good, and then the critical current value is reduced.

Description

technical field [0001] The invention relates to the technical field of laser components, in particular to a side-firing laser component. Background technique [0002] Semiconductor light-emitting devices can be classified into light-emitting diode (LED) devices and laser diode (LD) devices. LED elements are divergent light sources with weak luminous energy and large beam angles, so their functionality is insufficient, and they can only provide general lighting or be used in 2D sensing systems. As for the laser light generated by LD components, its beam angle and shape are relatively concentrated compared with LEDs, and it has the advantages of lower power consumption, high efficiency and high speed, so it is suitable for 3D sensing and optical communication fields. From a structural point of view, the structure of LD components is more complex than that of LED components. At the same time, the requirements for material properties are high and the design is also difficult. I...

AI Technical Summary

Problems solved by technology

In the structure of the aforementioned traditional FP laser element and DFB laser element, since the electrons from the n-type cladding layer and the lower optical confinement layer on the lower side of the laser element move faster than the p-type cladding layer on the upper side of the laser element And the holes in the optical confinement layer, so most of the electrons and holes will actually couple in the upper half of the active layer to emit light, which leads to the fact that the lower half of the active layer cannot be effectively used

In addition, this will also cause most of the light field to be biased in the upper half of the active layer (also known as the optical field offset in the vertical direction), and the coupling between the light field and the quantum well of the active layer is only biased in the upper half of the active layer. half, which also leads to the inability to increase the modal gain so that the critical current value cannot be reduced, nor can it reach a high operating rate (such as 10Gb / s) and cannot operate at high temperature

In summary, a larger critical current value means that more carrier density needs to be provided to cause population inversion to form laser and cause temperature rise, and carrier injection into the active layer will be easier as the temperature rises The phenomenon of overflow occurs, which also leads to a decrease in the coupling efficiency of carriers to the active layer

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