Check patentability & draft patents in minutes with Patsnap Eureka AI!

Polyimide composite film with high dielectric constant and preparation method thereof

A high dielectric constant, polyimide technology, applied in the field of high dielectric constant polyimide composite film and its preparation, can solve problems such as high dielectric loss, achieve low dielectric loss, increase internal interface area , the effect of high dielectric constant

Pending Publication Date: 2022-04-22
SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But near the theoretical value of percolation, extremely high dielectric loss due to the conductive grid formed by the conductive filler

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polyimide composite film with high dielectric constant and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0020] (1) Disperse 0.95g of FG@PI in 50ml of N,N-dimethylformamide solution, and ultrasonically disperse it at room temperature for 1h to form a suspension of FG@PI and N,N-dimethylformamide ;

[0021] (2) Under the environment of nitrogen and ice-water bath, add 3.6444g of N, N-dimethylformamide (ODA) to the above-mentioned FG@PI and N, N-dimethylformamide suspension, so that It was fully stirred until it was completely dissolved, and then, 5.8651 g of pyromellitic dianhydride (PMDA) was added thereto, and the reaction continued for 6 hours. To obtain a uniformly dispersed polyimide acid / FG@PI (PAA / FG@PI) mixed solution;

[0022] (3) Put the PAA / FG@PI mixed solution obtained in (2) on a clean glass plate, and complete imidization at a temperature of 100-350°C to obtain polyimide / FG@PI (PI / FG@PI) composite film;

[0023] (4) Take off the imidized PI / FG@PI composite film to make a sample, coat the surface with conductive adhesive, put it in an ordinary oven and dry it at 1...

example 2

[0025] (1) Disperse 1.9g of FG@PI in 50ml of N,N-dimethylformamide solution, and ultrasonically disperse it at room temperature for 1h to form a suspension of FG@PI and N,N-dimethylformamide ;

[0026] (2) Under the environment of nitrogen and ice-water bath, add 3.6444g of N, N-dimethylformamide (ODA) to the above-mentioned FG@PI and N, N-dimethylformamide suspension, so that It was fully stirred until it was completely dissolved, and then, 5.8651 g of pyromellitic dianhydride (PMDA) was added thereto, and the reaction continued for 6 hours. To obtain a uniformly dispersed PAA / FG@PI mixed solution;

[0027] (3) Place the PAA / FG@PI mixed solution obtained in (2) on a clean glass plate, and complete imidization at a temperature of 100-350°C to obtain a PI / FG@PI composite film;

[0028] (4) Take off the imidized PI / FG@PI composite film to make a sample, coat the surface with conductive adhesive, put it in an ordinary oven and dry it at 120°C for 30 minutes, and conduct a diele...

example 3

[0030] (1) Disperse 2.85g of FG@PI in 50ml of N,N-dimethylformamide solution, and ultrasonicate for 1h at room temperature to make it uniformly dispersed into a suspension of FG@PI and N,N-dimethylformamide ;

[0031] (2) Under the environment of nitrogen and ice-water bath, add 3.6444g of N, N-dimethylformamide (ODA) to the above-mentioned FG@PI and N, N-dimethylformamide suspension, so that It was fully stirred until it was completely dissolved, and then, 5.8651 g of pyromellitic dianhydride (PMDA) was added thereto, and the reaction continued for 6 hours. To obtain a uniformly dispersed PAA / FG@PI mixed solution;

[0032] (3) Place the PAA / FG@PI mixed solution obtained in (2) on a clean glass plate, and complete imidization at a temperature of 100-350°C to obtain a PI / FG@PI composite film;

[0033] (4) Take off the imidized PI / FG@PI composite film to make a sample, coat the surface with conductive adhesive, put it in an ordinary oven and dry it at 120°C for 30 minutes, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
dielectric lossaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of organic / inorganic composite materials, and discloses a polyimide composite film with a high dielectric constant and a preparation method thereof. According to the composite material, polyimide is used as a matrix, FG-PI composite particles prepared by wrapping flake graphite (FG) with polyimide are used as dielectric filler, and the poly PI / FG-PI composite film material is prepared. Wherein the FG-PI composite particles account for 5-50 wt% of the amount of the polyimide. According to the preparation method disclosed by the invention, the PI / FG-PI composite film with relatively high dielectric constant and extremely low dielectric loss can be obtained. The high-dielectric-constant polyimide composite film material prepared by the invention is used for a high-density energy storage device.

Description

technical field [0001] The invention belongs to the field of inorganic / organic composite materials, and designs a high dielectric constant polyimide composite film and a preparation method thereof. Background technique [0002] The chemical structure of polyimide determines that it has many distinctive properties and performance characteristics, mainly including excellent heat resistance, mechanical properties, good chemical stability and moisture resistance, as well as radiation resistance and dielectric properties. With the rapid development of the integrated circuit and electronics industry, the demand for materials with high dielectric constant and low dielectric loss is becoming more and more urgent. The most effective way to increase the dielectric constant is to introduce conductive fillers into the matrix material, which can obtain a higher dielectric constant. But near the theoretical value of percolation, extremely high dielectric loss will result due to the condu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08K9/12C08K7/00C08L79/08C08J5/18
CPCC08K9/12C08K7/00C08J5/18C08K2201/001C08J2379/08
Inventor 李科彭明云黄丙亮程杰左文燕胡磊
Owner SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com