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Organic transistor ray detector based on heterojunction layered structure and preparation method thereof

An organic transistor and ray detector technology, applied in the field of ray detectors, can solve problems such as hindering the realization of flexible detectors and high imaging resolution systems, low detection sensitivity and imaging resolution, increasing manufacturing complexity and cost, etc. The effect of improving detection sensitivity, improving detection sensitivity, and low detection limit

Pending Publication Date: 2022-05-06
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Obviously, this greatly increases the manufacturing complexity and cost, makes the detector larger, increases power consumption, and hinders the realization of flexible detectors and high imaging resolution systems
[0004] In addition to X-ray detectors, the current gamma-ray detection is mainly focused on the indirect detection method. Limited by the optional range of scintillators and material properties, the current gamma-ray detection sensitivity and imaging resolution are relatively low, so the development of Direct detection methods with high detection sensitivity and high imaging resolution are of particular importance and urgency

Method used

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  • Organic transistor ray detector based on heterojunction layered structure and preparation method thereof
  • Organic transistor ray detector based on heterojunction layered structure and preparation method thereof
  • Organic transistor ray detector based on heterojunction layered structure and preparation method thereof

Examples

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Embodiment 1

[0061] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.

[0062] In this example, a silicon wafer is used as the substrate, 3-mercaptopropyltrimethoxysilane (SH-TS) is used as the material for the monomolecular self-assembly layer, and the organic polymer polydithiophenediketopyrrolopyrrole- Thiophene (PDPPBTT) is used as a material for the semiconductor channel layer, perovskite CsPbBrI 2 Quantum dots (PNC) are used as the material for the X-ray absorbing layer, organic polymer polymethyl methacrylate (PMMA) is used as the material for the gate insulating layer, metal Al is used as the gate electrode, and metal Au is used as the source electrode and drain pole electrode.

[0063] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:

[0064] (1...

Embodiment 2

[0082] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.

[0083] In this embodiment, a silicon wafer is used as the substrate, SH-TS is used as the material for the monomolecular self-assembly layer, organic polymer PDPPBTT is used as the material for the semiconductor channel layer, and perovskite CsPbBrI 2The thin film is used as the material for the X-ray absorbing layer, the organic polymer PMMA is used as the material for the grid insulating layer, the metal Al is used as the grid electrode, and the metal Au is used as the source electrode and the drain electrode.

[0084] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:

[0085] (1) Place the silicon substrate in acetone, isopropanol, and deionized water for 10 minutes, and then use N ...

Embodiment 3

[0093] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.

[0094] In this embodiment, a silicon wafer is used as the substrate, SH-TS is used as the material for the monomolecular self-assembly layer, organic polymer poly 3-hexylthiophene (P3HT) is used as the material for the semiconductor channel layer, and perovskite CsPbBrI 2 The thin film is used as the material for the X-ray absorbing layer, the organic polymer PMMA is used as the material for the grid insulating layer, the metal Al is used as the grid electrode, and the metal Au is used as the source electrode and the drain electrode.

[0095] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:

[0096] (1) Place the silicon substrate in acetone, isopropanol, and deionized water for 10 min...

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Abstract

The invention discloses an organic transistor ray detector based on a heterojunction layered structure, a preparation method thereof and a ray detector, the ray detector comprises a substrate, a monomolecular self-assembly layer is arranged on the substrate, and a source electrode and a drain electrode are respectively arranged on partial areas of the monomolecular self-assembly layer. The source electrode, the drain electrode and the residual area of the monomolecular self-assembly layer are all provided with a ray absorption layer, the ray absorption layer is provided with a semiconductor channel layer, the semiconductor channel layer is provided with a gate insulation layer, and the gate insulation layer is provided with a gate electrode. According to the ray detector containing the heterojunction layered structure, by means of the gain amplification effect of the transistor, the detection sensitivity of the ray detector is effectively improved, the detection sensitivity is greatly improved, so that efficient ray detection can be achieved by using a thin ray absorption layer in a device, the ray detector is prepared on the flexible substrate, and the detection sensitivity is greatly improved. The high-performance ray detector with excellent mechanical flexibility is realized.

Description

technical field [0001] The invention belongs to the technical field of radiation detectors, and relates to an organic transistor radiation detector based on a heterojunction layered structure and a preparation method thereof. Background technique [0002] X-rays are widely used in many fields such as medical tomography, security inspection, industrial non-destructive testing, crystallography and astronomy. The importance of X-ray detectors is self-evident, because it largely determines how far we can go in the direction of using X-rays. For example, X-ray detectors with high sensitivity allow CT systems to image with ultra-low X-ray doses, which can significantly reduce the cancer risk of ionizing radiation to patients; in addition, flexible X-ray detectors can be aligned with the contour of the object to be detected Tight fit for more precise X-ray detection and imaging. It is clear that an ideal X-ray detector should balance high sensitivity, high spatial resolution, and...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48G01T1/24
CPCG01T1/24G01T1/241H10K30/354H10K30/65Y02E10/549
Inventor 李佳高源鸿
Owner SHENZHEN INST OF ADVANCED TECH
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