Organic transistor ray detector based on heterojunction layered structure and preparation method thereof
An organic transistor and ray detector technology, applied in the field of ray detectors, can solve problems such as hindering the realization of flexible detectors and high imaging resolution systems, low detection sensitivity and imaging resolution, increasing manufacturing complexity and cost, etc. The effect of improving detection sensitivity, improving detection sensitivity, and low detection limit
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Embodiment 1
[0061] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.
[0062] In this example, a silicon wafer is used as the substrate, 3-mercaptopropyltrimethoxysilane (SH-TS) is used as the material for the monomolecular self-assembly layer, and the organic polymer polydithiophenediketopyrrolopyrrole- Thiophene (PDPPBTT) is used as a material for the semiconductor channel layer, perovskite CsPbBrI 2 Quantum dots (PNC) are used as the material for the X-ray absorbing layer, organic polymer polymethyl methacrylate (PMMA) is used as the material for the gate insulating layer, metal Al is used as the gate electrode, and metal Au is used as the source electrode and drain pole electrode.
[0063] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:
[0064] (1...
Embodiment 2
[0082] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.
[0083] In this embodiment, a silicon wafer is used as the substrate, SH-TS is used as the material for the monomolecular self-assembly layer, organic polymer PDPPBTT is used as the material for the semiconductor channel layer, and perovskite CsPbBrI 2The thin film is used as the material for the X-ray absorbing layer, the organic polymer PMMA is used as the material for the grid insulating layer, the metal Al is used as the grid electrode, and the metal Au is used as the source electrode and the drain electrode.
[0084] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:
[0085] (1) Place the silicon substrate in acetone, isopropanol, and deionized water for 10 minutes, and then use N ...
Embodiment 3
[0093] This embodiment is used to illustrate the organic transistor X-ray detector based on the heterojunction layered structure provided by the present invention and its preparation method.
[0094] In this embodiment, a silicon wafer is used as the substrate, SH-TS is used as the material for the monomolecular self-assembly layer, organic polymer poly 3-hexylthiophene (P3HT) is used as the material for the semiconductor channel layer, and perovskite CsPbBrI 2 The thin film is used as the material for the X-ray absorbing layer, the organic polymer PMMA is used as the material for the grid insulating layer, the metal Al is used as the grid electrode, and the metal Au is used as the source electrode and the drain electrode.
[0095] A method for preparing a high-performance organic transistor X-ray detector based on a heterojunction layered structure, comprising the following steps:
[0096] (1) Place the silicon substrate in acetone, isopropanol, and deionized water for 10 min...
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Abstract
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Application Information
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