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Connection method of silicon carbide ceramics based on liquid phase sintering

A technology of silicon carbide ceramics and liquid phase sintering, which is applied in the field of ceramic connection, can solve the problems affecting the connection strength and service temperature, and achieve the effects of alleviating huge interface welding stress, excellent corrosion resistance, and widening the field of use and application range

Active Publication Date: 2022-05-13
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the general construction of the ceramic connection layer is mainly through the reaction connection technology, and the content and distribution of residual silicon in the obtained connection layer will affect the connection strength and service temperature.

Method used

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  • Connection method of silicon carbide ceramics based on liquid phase sintering
  • Connection method of silicon carbide ceramics based on liquid phase sintering
  • Connection method of silicon carbide ceramics based on liquid phase sintering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] 1) Slurry preparation: Add SiC balls, absolute ethanol, castor oil phosphate, polyvinyl butyral and mixed powder (SiC, AlN and Y 2 o 3 ), carry out ball milling, the control speed is 300 rpm, the time is 12h, and the ball-to-material ratio is 1:1. Wherein, the massfraction of castor oil phosphate is 5.5%, the massfraction of polyvinyl butyral ester is 2.5%, solid content is 50%, slurry viscosity is 800mPa.s (when shear rate is 20 / S) . SiC:AlN:Y 2 o 3 The mass ratio is 90:2:8. D of SiC powder 50 0.35μm, AlN D 50 0.18μm, Y 2 o 3 The median particle size D 50 4.87μm;

[0051] 2) Joining process: use a spin coater to coat two pieces of SiC ceramics whose surfaces have been treated by a grinder, and control the thickness of the slurry layer to 100 μm, and assemble it with a graphite fixture, with a pressure of 5 MPa. The joining is then performed in a pressureless sintering furnace. The specific process parameters are: rise to 1400°C at 10°C / min, then rise to 190...

Embodiment 2

[0054] 1) Slurry preparation: similar to Example 1, the difference is that the solid content is 50%, the slurry ball milling time is 24h, and the slurry viscosity is 630mPa.s (when the shear rate is 20 / S);

[0055] 2) Connection process: similar to the implementation case 1, the difference is that the highest temperature is 1700°C, and the holding time is 2h;

[0056] 3) Connection performance: The connection strength of the connected joint in this embodiment is 150 MPa at room temperature, and 100 MPa at a high temperature of 1400°C.

Embodiment 3

[0058] 1) Slurry preparation: similar to Example 1, the difference is that SiC:AlN:Y 2 o 3 The mass ratio is 95:1:4;

[0059] 2) Connection process: similar to Example 1, the difference is that the highest temperature is 1800°C and the holding time is 0.5h;

[0060] 3) Connection performance: the connection strength of the connected joint in this embodiment is 197 MPa at room temperature, and 167 MPa at a high temperature of 1400°C. After 72 hours of concentrated sulfuric acid corrosion, the connection strength is 170MPa; after 72 hours of concentrated nitric acid corrosion, the connection strength is 150MPa.

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Abstract

The invention relates to a connection method of silicon carbide ceramics based on liquid phase sintering, which comprises the following steps: (1) mixing silicon carbide powder, a sintering aid, a dispersant, a binder and a solvent to obtain suspension slurry; the sintering aid is AlN powder and Y2O3 powder; and (2) uniformly spreading the obtained suspension slurry on the to-be-connected surface of the first silicon carbide ceramic to obtain a slurry layer, attaching the to-be-connected surface of the second silicon carbide ceramic to the slurry layer, fixing the to-be-connected surface of the second silicon carbide ceramic by using a clamp, and finally realizing connection of the silicon carbide ceramics in a normal-pressure sintering furnace, preferably, the temperature of the liquid phase sintering is 1600-2000 DEG C, the heat preservation time is 0.5-5 hours, and the atmosphere is inert atmosphere, more preferably argon; wherein the pressure applied by the clamp is 1 to 10 MPa.

Description

technical field [0001] The invention relates to a silicon carbide ceramic connection method based on liquid phase sintering technology. The connection layer is composed of silicon carbide, which has the advantages of low connection interface stress, strong acid corrosion resistance, and excellent high-temperature mechanics, and belongs to the field of ceramic connection. Background technique [0002] Silicon carbide ceramics is a structural material with excellent performance. It has good high-temperature mechanical properties, high thermal conductivity, low density and thermal expansion coefficient, excellent wear resistance and corrosion resistance. It is widely used in aerospace, chemical industry, electronics, etc. It has a wide range of applications in the fields of transportation, nuclear energy and so on. However, the high brittleness, high hardness, and difficulty in post-processing of silicon carbide ceramics limit their further applications in these fields. A more...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
CPCC04B37/003C04B2237/083Y02E30/30
Inventor 刘岩周浩刘学建黄政仁
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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