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Film thickness measuring and finishing equipment, film coating system and film preparation method

A thickness measurement and thin film technology, which is applied in sputtering coating, vacuum evaporation coating, gaseous chemical coating, etc. The effect of short overall time, high efficiency and precise control

Active Publication Date: 2022-05-13
HEYUAN AIFO LIGHT COMM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, magnetron sputtering is mainly used to prepare AlN materials in the world. With the development of international semiconductor device processing towards large-size (6, 8, 12 inches) substrates, FBAR filter chips are no exception. As the size of the substrate increases, the differences in properties such as stress and roughness at various positions on the substrate will also increase. Therefore, using the traditional PVD magnetron sputtering system to ensure that the film thickness uniformity difference on the large-size substrate is within It is very difficult below 1nm, and the frequency of FBAR filter is closely related to the thickness, and the frequency of 1nm thickness difference will shift to MHz level. Therefore, designing a coating equipment that can prepare thin films with high thickness uniformity is crucial to the production of FBAR filters. important

Method used

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  • Film thickness measuring and finishing equipment, film coating system and film preparation method
  • Film thickness measuring and finishing equipment, film coating system and film preparation method
  • Film thickness measuring and finishing equipment, film coating system and film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] This embodiment provides a kind of thin film thickness measuring and trimming equipment, such as Figure 1-9 As shown, it includes: a slide loading device 3 , a thickness measuring device, a film repairing device 1 , a conveying device 2 and a PLC control device 6 .

[0058] Described chip loading device 3 comprises the first casing 31 that has chip loading cavity 34, and described chip loading cavity 34 is provided with wafer inlet 37, and wafer inlet 37 is used for putting into chip carrier 36, and chip carrier 36 is removable. Structure; the first housing 31 is provided with a first wafer transfer port 35; the wafer carrier 36 for accommodating wafers is placed in the wafer chamber 34; the wafer carrier 36 includes a hollow square housing , the inside of the hollow cube shell is formed with a three-quarter cylinder-shaped jamming structure, which can place 25 wafers of 4-8 inches, and the diameter of the wafer is smaller than the size of the opening of the side wall ...

Embodiment 2

[0072] This embodiment provides a coating system, which includes the above-mentioned film thickness measuring and trimming equipment, and further includes: a coating device, and the coating device is also electrically connected to the PLC control device. The coating device can be all intelligent equipment for coating such as PVD equipment, measurement and control sputtering equipment, chemical vapor deposition equipment, etc., and it can be assembled into a coating system after connecting it with the PLC control equipment of this case and performing corresponding program design.

Embodiment 3

[0074] The film thickness measuring and trimming equipment of Example 1 is used to trim the grown AlN film to 0.53 microns, specifically by the following methods:

[0075] 1. Put the AlN-grown wafer neatly into the plug, put the plug into the slide chamber, close the chamber door, and carry out vacuuming. When the vacuum degree reaches 10 -2 Torr to proceed to the next step.

[0076] 2. Open the valve between the loading chamber and the transfer chamber, operate the manipulator to extract the wafer from the loading chamber, transfer it into the laser confocal microscopic measurement chamber for multi-point continuous measurement of the wafer, and obtain the uniformity of the thickness of the AlN film on the entire wafer. Cloud image, thickness uniformity test results such as Figure 11 Left, the uniformity cloud image is stored in the device for use in film repair.

[0077] 3. After the measurement is completed, operate the manipulator to transfer the wafer to the repair cha...

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Abstract

The invention provides thin film thickness measuring and finishing equipment, a PVD coating system and a thin film preparation method. The film thickness measuring and trimming equipment comprises a slide glass device, a thickness measuring device, a film trimming device, a conveying device and a PLC (Programmable Logic Controller) control device, the wafer carrying device comprises a first shell with a wafer carrying cavity, and a wafer carrying device for accommodating a wafer is placed in the wafer carrying cavity; the thickness measuring device comprises an X-ray fluorescence measuring device and a laser confocal microscopic measuring device; the film repairing device comprises a fourth shell with a film repairing cavity; a film repairing slide holder and a focused ion beam device for cleaning and flattening the surface of the wafer are arranged in the film repairing cavity; the conveying device comprises a fifth shell with a conveying cavity; a manipulator for taking and placing the wafer is arranged in the transmission cavity; and the PLC control device is respectively connected with the devices. By adopting the film thickness measuring and trimming equipment, the film coating system and the film preparation method, the 4-8-inch wafer with the film thickness uniformity smaller than or equal to 0.1% can be obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a thin film thickness measuring and trimming device, a coating system and a thin film preparation method. Background technique [0002] The multi-functional development of wireless communication terminals has put forward high technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. The traditional surface acoustic wave filter (SAW) has a large insertion loss in the high frequency band above 2.4GHz, and the dielectric filter has good performance but is too large. Film Bulk Acoustic Resonator (FBAR) technology is a new radio frequency device technology that has emerged in recent years with the improvement of processing technology and the rapid development of modern wireless communication technology, especially personal wireless communication technology. It has a very high qu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C14/54C23C14/35C23C14/06C23C14/16C23C14/56C23C14/58C23C16/56C23C16/34C23C16/06C23C16/54H03H3/02
CPCC23C14/547C23C14/35C23C14/0617C23C14/165C23C14/568C23C14/5833C23C16/52C23C16/56C23C16/303C23C16/06C23C16/54H03H3/02H03H2003/023
Inventor 李国强
Owner HEYUAN AIFO LIGHT COMM TECH CO LTD