Low-temperature sputtering graphene transparent electrode thin-film solar cell
A technology for solar cells and transparent electrodes, applied in the field of solar cells, can solve the problem that the process is not suitable for mass production, and achieve the effects of reducing labor costs, avoiding the loss of selenium, and improving production efficiency
Pending Publication Date: 2022-05-13
项芳利
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Problems solved by technology
[0004] The present invention aims to solve the problem that the original process is not suitable for mass production, and provides a low-temperature sputtered graphene transparent electrode thin-film solar cell
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[0053] It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0054] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0055] Reference attached Figure 1-3 , is a schematic structural view of a graphene transparent electrode thin-film solar cell sputtered at low temperature in an embodiment of the present invention;
[0056] The invention provides a low-temperature sputtered graphene transparent ele...
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The invention provides a low-temperature sputtering graphene transparent electrode thin-film solar cell, which is applied to the technical field of solar cells, and is characterized in that a molybdenum thin film with the thickness of about 0.35-1.0 micron is plated on a soda-lime glass substrate or a flexible substrate with sodium, and a photovoltaic'copper-zinc-tin-selenium 'thin film layer with the thickness of about 0.7-1.5 microns or the standard thickness of 1.0 micron is plated on the molybdenum thin film; plating a p-n junction film on the upper surface of the copper-zinc-tin-selenium film layer; cadmium sulfide or zinc sulfide with the thickness of 0.05 micron is plated on the copper-zinc-tin-selenium thin film and the crystal; plating an insulating layer zinc oxide with the thickness of about 0.1 micron on the cadmium sulfide or the zinc sulfide; plating a graphene transparent conductive film with the thickness of about 0.35-1.9 microns on the zinc oxide as a front electrode, plating nickel with the thickness of about 0.05 microns on the front electrode, and plating an aluminum film with the thickness of about 3.0 microns on the nickel; plating a layer of protective nickel with the thickness of about 0.05 micron on the aluminum film; a soda-lime cover glass or other flexible cover layer having a thickness of about 1.0 to 4.0 mm is placed on the protective nickel.
Description
technical field [0001] The invention relates to the technical field of solar cells, in particular to a low-temperature sputtered graphene transparent electrode thin-film solar cell. Background technique [0002] Existing common thin-film solar cells use thin-film materials such as 'cadmium telluride', 'amorphous silicon' or 'copper indium gallium selenide' to convert solar photovoltaic power, use soda-lime glass, metal or other flexible substrates, and use high-temperature evaporation , or use the sputtering process first, after plating the metal material, then use the 'selenization' or 'telluride' process to establish a 'P-N junction', and then lay the front and rear electrodes on the upper and lower layers of the absorber layer; except for 'amorphous Silicon', these thin film materials are very expensive and rare materials, and the conversion efficiency of 'amorphous silicon' is too low, 'cadmium telluride' has pollution problems, and the manufacturing process of 'copper i...
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Patent Timeline
Login to View More IPC IPC(8): H01L31/0445H01L31/072H01L31/032H01L31/18C23C14/35C23C14/58C23C14/06
CPCH01L31/0445H01L31/072H01L31/0326H01L31/18H01L31/1864C23C14/35C23C14/5806C23C14/0623Y02E10/50
Inventor 马给美
Owner 项芳利