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Hydrogen-absorbing device for hydrogen-sensitive hybrid integrated circuit and preparation method thereof

A hybrid integrated circuit, sensitive technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of high cost, low hydrogen absorption efficiency/rate, poor use robustness, etc.

Active Publication Date: 2022-06-28
南京盖特尔电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the method of hydrogen-absorbing components used in hydrogen-sensitive hybrid integrated circuits is mainly to use titanium metal sheet as the hydrogen-absorbing material, and then electroplate or magnetron sputtering on its surface to coat hundreds of nanometers of palladium metal as a protective layer, or magnetic Controlled sputtering titanium / palladium metal is used as transition layer and protective layer respectively, as disclosed in Chinese patent application CN110863174A a kind of titanium-based hydrogen-absorbing material that does not need activation and its preparation method and a kind of hydrogen-absorbing material that is used for electronic packaging disclosed in CN110699649 and its preparation method, although the hydrogen absorbing device of this structure is effective, the hydrogen absorbing efficiency / rate is relatively low, and the use robustness is not good, and the Ti substrate and the Pd film combined with the catalytic cracking and permeation effect on the Ti substrate, Although the performance of the product using palladium metal is good, in order to obtain a better hydrogen absorption effect, it needs to be thicker, resulting in high cost

Method used

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  • Hydrogen-absorbing device for hydrogen-sensitive hybrid integrated circuit and preparation method thereof
  • Hydrogen-absorbing device for hydrogen-sensitive hybrid integrated circuit and preparation method thereof
  • Hydrogen-absorbing device for hydrogen-sensitive hybrid integrated circuit and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0131]A 0.3mm-thick alumina ceramic sheet is used as a carrier, and a cuboid microcone of 0.8mm×0.8mm×0.1mm (length×width×height) and an inclination angle of 80 degrees is formed on its surface to enhance the specific surface, and the entire surface passes through Chemical roughening further enhances the specific surface, such as Figure 3a shown. Then, the surface film layer was prepared by magnetron sputtering process. The surface of the carrier was covered with 20μm 4N (purity 99.99%) metal titanium as the hydrogen absorption layer, and the hydrogen absorption layer was covered with 1μm thick cobalt as the selective hydrogen permeability layer. The selective hydrogen permeation layer is covered with palladium with a thickness of 10 nm as a protective layer, and finally, a layer of PDMS with a thickness of 10 μm is sprayed on the surface as an anti-particle peeling layer, such as Figure 3b shown.

[0132] in Figure 3b Represents the schematic structure of the surface fi...

Embodiment 2

[0134] The zero-grade sponge titanium of 10mm×5mm×1mm (length×width×height) is used as the carrier and also serves as the hydrogen absorption layer, and a layer of metal palladium with a thickness of 500nm is electroplated on the surface and hole wall as the selective hydrogen permeation layer and as the protective layer. ,like Figure 4a Then, a 15μm polystyrene (Polystyrene: MW=280K) polymer film is sprayed on the surface as an anti-particle peeling layer. In this embodiment, the selective hydrogen permeation layer and the protective layer are made of the same metal palladium. Do.

[0135] in, Figure 4b It means that the zero-grade sponge titanium includes: 500nm-thick metal palladium as the selective hydrogen permeation layer and protective layer, and 15μm-thick polystyrene (Polystyrene: MW=280K) polymer film anti-particle shedding layer.

Embodiment 3

[0137] Using 3N5 (purity 99.95%) titanium tape (thickness 0.2mm) as the carrier and hydrogen absorption layer, the surface is processed by surface enhancement to form micro-cone grooves with a height of about 50 microns to enhance the specific surface, such as Figure 5a As shown; re-cladding is covered with 0.5 μm thick cobalt as a selective hydrogen permeation layer and 10 nm thick palladium as a protective layer, without an anti-particle peeling layer.

[0138] Figure 5b The schematic structure of the surface film layer prepared on the basis of the titanium carrier is shown, including a cobalt selective hydrogen permeation layer with a thickness of 0.5 μm and a palladium protective layer with a thickness of 10 nm.

[0139] The reference numeral 12 denotes a micro-cone groove structure.

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Abstract

The invention relates to the field of integrated circuits, and provides a hydrogen-absorbing device for hydrogen-sensitive hybrid integrated circuits, including: a carrier; a hydrogen-absorbing layer, a selective hydrogen-permeating layer and a protective layer sequentially stacked on the surface of the carrier; wherein: the The hydrogen-absorbing layer is covered on the surface of the carrier and is used for hydrogen absorption / hydrogen storage; the selective hydrogen-permeable layer is covered on the hydrogen-absorbing layer and is used to selectively allow hydrogen gas to pass through and Prevent other gases from permeating; the protective layer adopts a metal / alloy film with stable properties in the air environment, which is covered on the selective hydrogen permeable layer to allow hydrogen to permeate and protect the selective hydrogen permeable layer below it. The hydrogen permeable layer does not react with the gas in the air to weaken the hydrogen permeation.

Description

technical field [0001] The invention relates to the field of hybrid integrated circuits, in particular to a selective hydrogen absorption device in a hybrid integrated circuit package, and in particular to a hydrogen absorption device for a hydrogen-sensitive hybrid integrated circuit, which is suitable for a hydrogen-sensitive hybrid integrated circuit package. Selective absorption of hydrogen in the medium to improve reliability and lifetime of hybrid integrated circuit packages. Background technique [0002] Due to the active devices (such as various semiconductor chips) and passive devices (such as packaging substrates, packaging shells, wave absorbing sheets, etc.) in their production process, and in the packaging process (such as various soldering, lead-free soldering, etc. , eutectic, gluing, etc.) will inevitably introduce hydrogen, or the chemical reaction in the manufacturing process and packaging process will generate hydrogen. This hydrogen will be absorbed by a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/26C23C14/35C23C14/14C25D7/00
CPCH01L23/26C23C14/35C23C14/14C25D7/00Y02E60/32
Inventor 王列松黄冠华
Owner 南京盖特尔电子科技有限公司
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