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Dry etching process of N-polarity III-V group semiconductor material

A III-V, dry etching technology, applied in semiconductor/solid-state device manufacturing, climate sustainability, sustainable manufacturing/processing, etc., can solve the problem of increased etching surface roughness, process and device preparation effects, etc. question

Pending Publication Date: 2022-05-27
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, studies have shown that N-polar III-V semiconductor materials are more active and more likely to absorb impurities, resulting in a substantial increase in the roughness of the etched surface, which will have a great impact on subsequent processes and device preparation.

Method used

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  • Dry etching process of N-polarity III-V group semiconductor material
  • Dry etching process of N-polarity III-V group semiconductor material
  • Dry etching process of N-polarity III-V group semiconductor material

Examples

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Effect test

Embodiment 1

[0026] An embodiment of the dry etching process of the present invention, the dry etching process of this embodiment includes the following steps:

[0027] (1) The etching object is N-polar Al(Ga)N thin film material, which is divided into four layers from top to bottom, AlN, Al in turn 0.4 Ga 0.6 N, Al 0.2 Ga 0.8 N, GaN, the thickness of each layer is 300nm; ultrasonically clean the etched objects with acetone, isopropanol and deionized water respectively, and dry them with nitrogen;

[0028] (2) Put the etched object into the reaction chamber of the ICP etching machine, and feed 8sccm of BCl 3 , 24sccm of Cl 2 , Ar of 5sccm, SF of 3sccm 6 , the pressure in the chamber is 8mtorr, the sample temperature is 20℃, the ICP power is 500W, and the RF bias power is 150W.

Embodiment 2

[0030] An embodiment of the dry etching process of the present invention, the dry etching process of this embodiment includes the following steps:

[0031] (1) The sample is an N-polar Al(Ga)N thin film material, which is divided into four layers from top to bottom, AlN, Al in turn 0.4 Ga 0.6 N, Al 0.2 Ga 0.8 N, GaN, the thickness of each layer is 300nm; ultrasonically clean the etched objects with acetone, isopropanol and deionized water respectively, blow dry with nitrogen, and then bake on a hot plate at 110°C for 10min;

[0032] (2) Spin coating, pre-bake, expose, develop, and post-bake the above samples using AZ 4620 photoresist to obtain an etching preparation sheet; spin coating rate 8000rps, time 30s; prebaking temperature 105°C, time 90s; exposure Time 8s; development time 3min; post-baking temperature 105℃, time 3min;

[0033] (3) Put the etched object into the reaction chamber of the ICP etching machine, and feed 8sccm of BCl 3, 24sccm of Cl 2 , Ar of 5sccm, S...

Embodiment 3

[0036] An embodiment of the dry etching process of the present invention, the dry etching process of this embodiment includes the following steps:

[0037] (1) The etching object is N-polar Al(Ga)N thin film material, which is divided into four layers from top to bottom, AlN, Al in turn 0.4 Ga 0.6 N, Al 0.2 Ga 0.8 N, GaN, the thickness of each layer is 300nm; ultrasonically clean the etched objects with acetone, isopropanol and deionized water respectively, and dry them with nitrogen;

[0038] (2) Put the etched object into the reaction chamber of the ICP etching machine, and feed 5sccm of BCl 3 , 30sccm of Cl 2 , Ar of 10sccm, SF of 2sccm 6 , the pressure in the chamber is 8mtorr, the sample temperature is 20℃, the ICP power is 500W, and the RF bias power is 150W.

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Abstract

The invention discloses a dry etching process of an N-polarity III-V group semiconductor material, and relates to the technical field of semiconductor materials. According to the dry etching process, ICP etching is carried out on the N-polarity III-V group semiconductor material, and working gas comprises boron trichloride, chlorine gas, argon gas and etching gas containing fluorine ions. According to the invention, the type of the working gas is selected, so that the surface of the etched semiconductor material is smoother and has fewer impurities.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a dry etching process for N-polar III-V group semiconductor materials. Background technique [0002] Group III-V materials have been widely used in light-emitting devices, high-speed devices, high-temperature devices, high-frequency devices, and high-power devices due to their high carrier mobility and large band gap. Among them, N-polar HEMT has lower ohmic contact resistance, better 2-dimensional electron gas (2DEG) threshold and stronger suppression of short-channel effect due to its opposite polarity to traditional metal-polar HEMT. capacity, etc., showing more excellent device performance. However, studies have shown that N-polar III-V semiconductor materials are more active and more likely to absorb impurities, resulting in a substantial increase in the roughness of the etched surface, which will have a great impact on subsequent processes and device prepar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3065Y02P70/50
Inventor 葛晓明李成果尹雪兵曾巧玉陈志涛
Owner GUANGDONG INST OF SEMICON IND TECH
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