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Flux growth method and application of large-size bismuth tungstate crystal

A growth method and crystal growth technology, which are applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small light yield, etc., and achieve the effect of low price and simple operation.

Pending Publication Date: 2022-05-31
LINYI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, PbWO4 and CdWO4 crystals that are widely used at present contain heavy metal elements such as lead and cadmium that are a serious threat to the environment, and the light yield of such crystals that have not been doped with rare earths is generally relatively small, which limits the crystal's performance to a certain extent. application

Method used

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  • Flux growth method and application of large-size bismuth tungstate crystal
  • Flux growth method and application of large-size bismuth tungstate crystal
  • Flux growth method and application of large-size bismuth tungstate crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] The present embodiment provides a flux growth method for large-size bismuth tungstate crystals, the method comprising the following steps:

[0065] Step S1, prefabrication of crystal growth material:

[0066] Bi 2 WO 6 polycrystalline synthesis. Bi 2 o 3 、WO 3 Proportion according to the stoichiometric ratio, after ball milling and full mixing, press on the press machine, transfer to the corundum crucible and sinter in the muffle furnace, the sintering temperature is 850°C, the sintering time is not less than 8 hours, and then the furnace is cooled to room temperature. Repeat grinding, mixing and sintering process no less than 2 times. Powder X-ray diffraction experiments were performed after grinding, such as image 3 As shown, the results are completely consistent with the theoretical diffraction pattern, without additional diffraction peaks, indicating that the Bi 2 WO 6 phase-pure polycrystals.

[0067] Step S2, flux growth of the target crystal:

[0068...

Embodiment 2

[0071] The prefabrication of the crystal growth material in step S1 is the same as that in Example 1.

[0072] Step S2, flux growth of the target crystal:

[0073] Bi 2 WO 6 seed crystal growth. With Li 2 B 4 o 7 -Bi 2 o 3 As a flux, Li in the flux 2 B 4 o 7 with Bi 2 o 3 The molar ratio is 1:0.5. The preparation method of the high-temperature homogeneous solution is the same as in Example 1. Lightly touch the platinum wire to the liquid surface, and by observing the temperature point where crystals are formed on the platinum wire during the cooling process, the saturation temperature of the crystals is accurately determined to be 873°C. After reheating to obtain a clear and homogeneous solution, the temperature was lowered to 873° C. for 10 hours and then kept at constant temperature for 5 hours. Using the single crystal obtained in Example 1 as the seed crystal, the temperature began to drop after lightly touching the liquid surface, and after 20 days of growt...

Embodiment 3

[0075] Bi 2 Mo 0.15 W 0.85 o 6 Crystal seed growth and crystal structure analysis. Bi was synthesized in the manner set forth in Example 1 2 Mo 0.15 W 0.85 o 6 polycrystalline, MoO during synthesis 3 Slightly overdose. With Li 2 B 4 o 7 -Bi 2 o 3 As a flux, Li in the flux 2 B 4 o 7 with Bi 2 o 3 The molar ratio is 1:0.5. The preparation method of the high-temperature homogeneous solution is the same as in Example 1. Lightly touch the platinum wire to the liquid surface, and by observing the temperature point where crystals are formed on the platinum wire during the cooling process, the saturation temperature of the crystals is accurately determined to be 855°C. After reheating to obtain a clear and homogeneous solution, the temperature was lowered to 855° C. for 10 hours and then kept at constant temperature for 5 hours. Using the single crystal obtained in Example 1 as the seed crystal, the temperature began to drop after lightly touching the liquid surfa...

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Abstract

The invention provides a fluxing agent growth method and application of a large-size bismuth tungstate crystal. The fluxing agent growth method comprises the following steps: prefabricating a crystal growth material, synthesizing polycrystal of a target crystal in advance, and fully mixing the polycrystal with a fluxing agent to obtain the crystal growth material; or directly proportioning the raw materials according to the stoichiometric ratio of the target crystal without polycrystal synthesis of the target crystal, and fully mixing the raw materials with a fluxing agent to obtain a crystal growth material; and performing fluxing agent growth of the target crystal, firstly performing seed-crystal-free growth, and then performing seed crystal growth to obtain the target crystal. According to the method, the required conditions are easy to reach, the operation is simple, the large-size single crystal of 30mm * 30mm * 2mm can be obtained within the growth period of about 20 days, and the requirements of processing and physical property characterization are basically met. The adopted fluxing agent does not contain high-toxic elements, can be conveniently obtained in the market and is low in price, and waste residues generated in the growth process have small pollution and damage to the environment.

Description

technical field [0001] The invention belongs to the technical field of scintillation crystals, in particular to a flux growth method and application of large-sized bismuth tungstate crystals. Background technique [0002] Scintillation crystals refer to crystals that can convert high-energy particles and high-energy rays that are difficult to detect directly (such as high-speed charged particles, X-rays, γ-rays, neutrons, etc.) into visible light or near-ultraviolet light that can be directly detected by photodetectors. According to the photoelectric characteristics of scintillation crystals, scintillation crystals can be coupled with photoelectric elements such as photomultiplier tubes (PMTs), photodiodes (PDs), and avalanche diodes (APDs) to prepare scintillation detectors, which can be used in high-energy physics, biomedical detection, and industrial exploration. , security inspection and other fields have important applications. For example, in terms of high-energy phys...

Claims

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Application Information

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IPC IPC(8): C30B29/32C30B28/02C30B9/12G01T1/202G02F1/355
CPCC30B29/32C30B9/12C30B28/02G01T1/2023G02F1/3551
Inventor 田相鑫刘敬权
Owner LINYI UNIVERSITY
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