Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a three-dimensional nucleating layer, a two-dimensional recovery layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type electron barrier layer, a P-type non-doped GaN layer, a P-type Mg-doped GaN layer and a P-type contact layer which are sequentially stacked on the substrate, the P-type electron barrier layer comprises m superlattice structure sub-layers; the superlattice structure sublayer is of a superlattice structure composed of nm pieces of In < x > Ga < 1-x > N / Al < y > m Ga < 1-y > m N which are arranged periodically. Along the direction from the multi-quantum well layer to the P-type non-doped GaN layer, the concentration of the Al component in each superlattice structure sub-layer is gradually increased and then gradually reduced. The light-emitting diode epitaxial wafer solves the problem that the light-emitting efficiency of the light-emitting diode epitaxial wafer is reduced due to lattice mismatch between the existing P-type electron barrier layer and the multi-quantum well layer and between the existing P-type electron barrier layer and the P-type GaN layer.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) are commonly used light-emitting devices that emit energy through the recombination of electrons and holes, and are widely used in the field of lighting. Light-emitting diodes can efficiently convert electrical energy into light energy, and have a wide range of uses in modern society, such as lighting, flat panel displays, medical devices, etc. With the continuous development of LED technology, while it is more and more widely used, it also faces higher and higher requirements, especially the luminous efficiency and antistatic performance of LEDs. [0003] At present, the luminous efficiency of LEDs is still not high, especially as the chip size decreases, the current density becomes larger and larger, and the electrons have lower effective ...

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Problems solved by technology

[0005] Based on this, the purpose of the present invention is to provide a light-emitting diode epitaxial wafer and its preparation method to fundamentally solve the problems caused by the lattice mismatch between the existing P-type electron blocking layer and the multi-quantum well layer and the P-type GaN layer. The problem of reducing the luminous efficiency of light-emitting diode epitaxial wafers

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