Groove type ferroelectric storage unit structure and preparation method thereof

Abstract

The invention relates to the technical field of information storage, and provides a groove type ferroelectric storage unit structure and a preparation method thereof. According to the invention, a fin type field effect transistor FinFET is adopted to replace a traditional planar transistor in a preparation process, and compared with the traditional planar transistor, the FinFET transistor has absolute advantages in the aspects of inhibiting a short channel effect and reducing electric leakage. The method further comprises the step of folding and integrating the ferroelectric capacitor on the surface and the side wall of the groove formed in the drain electrode region. Compared with a traditional structure, the ferroelectric memory cell structure provided by the invention can further reduce the size of the memory cell. And under the same process node, the data information capacity can be greatly improved only by changing the structure of the memory device. The ferroelectric memory chip is simple in structure and can be widely applied to high-density ferroelectric memory chips.

Description

technical field [0001] The invention relates to the field of information storage, in particular to a ferroelectric storage unit structure and a preparation method. Background technique [0002] Ferroelectric memory is a new type of non-volatile memory. Compared with traditional memory, ferroelectric memory has the following advantages: fast access time, low operating voltage, low read and write power consumption, and long service life. Moreover, the ferroelectric memory, as a RAM-type memory, still exists after the power is turned off and will not be lost. In addition, the strong radiation resistance of ferroelectric memory makes it unique in aerospace applications. [0003] In some dielectric crystals, the special structure of the unit cell makes the positive and negative charge centers do not coincide and an electric dipole moment occurs, resulting in an electric polarization intensity not equal to zero, so that the crystal has spontaneous polarization, and the direction...

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Problems solved by technology

compared to attached image 3 The structure shown, although this structure reduces the area of ​​a single memory cell to a certain extent, it is still limited by the minimum area requirement of the plate capacitor

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