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Preparation method of large-area uniform single-layer graphene film

A technology of single-layer graphene and multi-layer graphene, which is applied in the field of graphene and can solve the problems of large-area, uniform, and high-quality single-layer graphene

Active Publication Date: 2022-07-01
INST OF CHEM CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the copper-catalyzed substrate has a relatively low carbon solubility, there are various inhomogeneities in the growth process of graphene, such as nucleation, local concentration of carbon sources, substrate surface energy, temperature, and substrate adsorption carbon content. The inhomogeneity will statistically cause the existence of a certain proportion of multilayer graphene, which makes it difficult to obtain large-area, uniform, and high-quality single-layer graphene.

Method used

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  • Preparation method of large-area uniform single-layer graphene film
  • Preparation method of large-area uniform single-layer graphene film
  • Preparation method of large-area uniform single-layer graphene film

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Embodiment 1

[0055] Example 1. Preparation of large-area continuous single-layer graphene film

[0056] 1) Preparation of large-area monolayer continuous graphene films

[0057] The large-area single crystal copper (111) was electrochemically polished, the sample copper foil with a thickness of 100 μm was connected to the positive electrode of the DC power supply, and the metal copper electrode was connected to the negative electrode. The applied voltage is 2-6V, preferably 5V, the current is 1-4A, preferably 3A, and the polishing time is 2-5min, preferably 3min. Then rinse with deionized water, normal N 2 Blow dry. , placed in the center of the tube furnace, passed 200sccm of argon and 25sccm of hydrogen, set the heating time to 45min, when the temperature reached 1075 ℃, passed 4sccm of methane and grown for 1h.

[0058] During this process, graphene islands will form oriented, multi-layer graphene single crystals on the surface of copper (111), such as figure 1 shown. With the prog...

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Abstract

The invention discloses a method for preparing a large-area uniform single-layer graphene film. According to the method, single-crystal substrate copper (111) subjected to electrochemical polishing is put into a high-temperature tubular furnace, and a large-area uniform single-layer graphene film can be obtained by adopting a chemical vapor deposition method. According to the method, two-step carbon source supply is utilized, the multi-layer graphene large-area film is grown through a high carbon source, then the carbon source is reduced, long-time supply of a small carbon source is maintained, multi-layer areas are etched preferentially, and finally dynamic balance of etching and growth is achieved, so that the large-area continuous single-layer graphene film is obtained.

Description

technical field [0001] The invention belongs to the field of graphene, and relates to a method for preparing a large-area uniform monolayer graphene film. Background technique [0002] The ideal graphene is composed of a single layer of carbon atoms sp 2 Hybridized hexagonal honeycomb material. In 2004, Prof. Andre K.Geim and Prof. Konstantin S. Novoselov obtained graphene by mechanical exfoliation, and were awarded the Nobel Prize in Physics in 2010. Graphene has excellent electrical, optical, thermal and magnetic properties, such as excellent electrical conductivity, good light transmittance, high mechanical strength, high thermal conductivity, as well as superconductivity, high Young's modulus, high specific surface area, etc. Especially its excellent electrical properties are expected to be used in field effect transistors, transparent flexible electrodes, spintronics and other devices. [0003] Practical applications are always based on and premised on preparation. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186C01B2204/02
Inventor 武斌姚文乾张家宁刘云圻
Owner INST OF CHEM CHINESE ACAD OF SCI
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