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Silicon-based thin film, solar cell and preparation method of silicon-based thin film

A silicon-based thin-film, solar cell technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of high cost pressure, low-efficiency gas utilization rate, and increase production cost of HJT solar cells. Bond density, enhanced molecular collisions, improved mass effects

Pending Publication Date: 2022-07-29
ZHONGWEI NEW ENERGY CHENGDU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This inefficient gas utilization brings great cost pressure to the production of large-scale high-efficiency HJT solar cells
Moreover, in actual production, the method of further reducing the utilization rate of reaction gas is often adopted to improve the quality of the film, which further increases the production cost.

Method used

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  • Silicon-based thin film, solar cell and preparation method of silicon-based thin film
  • Silicon-based thin film, solar cell and preparation method of silicon-based thin film

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preparation example Construction

[0038] Some embodiments of the present invention provide a method for preparing a silicon-based thin film, including the following steps S100 and S200.

[0039] Step S100: Preheating the substrate.

[0040] Specifically, the substrate used is an n-type single crystal silicon substrate. The specific steps of preheating the substrate are as follows: first, placing the substrate in a vacuum preheating chamber, preheating the substrate, and filling the preheating chamber with hydrogen and inert gas during the preheating process.

[0041]In the traditional silicon-based thin film deposition method, the preheating time of the n-type single crystal silicon substrate is generally long, which leads to a long production tact time and affects the production efficiency. In the present invention, hydrogen and inert gas are filled into the preheating chamber during the preheating process of the substrate; the introduction of hydrogen can enhance the collision of gas molecules, thereby acce...

Embodiment 1

[0076] A method for preparing a heterojunction solar cell according to an embodiment of the present invention includes the following steps:

[0077] 1) Texturing and cleaning of n-type single crystal silicon substrate:

[0078] The n-type single crystal silicon substrate is textured with alkaline solutions such as KOH and NaOH, and the surface of the n-type single crystal silicon substrate is textured by the anisotropic etching characteristics of the alkaline solution; then the RCA1 and RCA2 solutions are used The n-type single crystal silicon substrate is cleaned to obtain an n-type single crystal silicon substrate with a clean surface.

[0079] 2) Deposition of silicon-based thin films:

[0080] Intrinsic silicon thin films and n-type doped silicon stacked thin films are sequentially deposited on the first surface of the n-type single crystal silicon substrate by PECVD; sequentially deposited on the second surface of the n-type single crystal silicon substrate opposite to t...

Embodiment 2

[0090] A method for preparing a silicon heterojunction solar cell according to an embodiment of the present invention includes the following steps:

[0091] 1) Texturing and cleaning of n-type single crystal silicon substrate:

[0092] The n-type single crystal silicon substrate is textured with alkaline solutions such as KOH and NaOH, and the surface of the n-type single crystal silicon substrate is textured by the anisotropic etching characteristics of the alkaline solution; The silicon substrate is cleaned to obtain an n-type single crystal silicon substrate with a clean surface, which is placed in an ultra-clean space so that a natural oxide layer of about 2 nm is formed on the surface of the single crystal silicon substrate.

[0093] 2) Deposition of silicon thin film passivation layer:

[0094] Intrinsic silicon thin films and n-type doped silicon stacked thin films are sequentially deposited on the first surface of the n-type single crystal silicon substrate by HWCVD t...

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Abstract

The invention provides a silicon-based thin film, a solar cell and a preparation method of the silicon-based thin film. The preparation method of the silicon-based thin film comprises the following steps: preheating a substrate; the preheated substrate is placed in a deposition chamber, hydrogen and inert gas are filled into the deposition chamber, glow discharge is triggered, then reaction gas is filled into the deposition chamber, and the silicon-based thin film is formed on the substrate through deposition. Before glow discharge, hydrogen and inert gas are introduced into a deposition chamber, and after glow is started, through interaction of the inert gas and hydrogen, the collision frequency of gas molecules is enhanced, and rich metastable atomic hydrogen is excited, so that the dangling bond density in the thin film is greatly reduced, the defect mode is reduced, and the quality of the silicon-based thin film is improved; the addition of the inert gas can accelerate the decomposition of the reaction gas, improve the utilization rate of the reaction gas and reduce the production cost. The silicon-based thin film is low in production cost and good in quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor photoelectric conversion, in particular to a silicon-based thin film, a solar cell and a preparation method thereof. Background technique [0002] Silicon heterojunction (HJT, Heterojunction with Intrinsic Thin Film) solar cell is a high-efficiency crystalline silicon solar cell, which has attracted widespread attention in the photovoltaic industry due to its high open circuit voltage, high conversion efficiency, and low temperature coefficient. The HJT cell is also a bifacial cell with a high bifacial ratio. Since the back side is also a grid line electrode that allows light to enter, it further contributes to the power generation. Under the same conditions, its power generation output is higher than that of ordinary crystalline silicon solar cells10 %above. Therefore, this type of solar cell has a higher cost performance. [0003] The HJT cell is based on an n-type monocrystalline silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L31/028H01L31/0747H01L31/20C23C16/24C23C16/46C23C16/50
CPCH01L21/02532H01L21/0262H01L21/02658H01L31/028H01L31/0747H01L31/202C23C16/24C23C16/46C23C16/50Y02P70/50
Inventor 张丽平刘正新蓝仕虎张海川赵晖李龙文孟凡英
Owner ZHONGWEI NEW ENERGY CHENGDU CO LTD
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