Light intensity distribution simulation method for thick photoresist photoetching process
A technology of light intensity distribution and thick glue, which is applied in microlithography exposure equipment, photolithography exposure equipment, design optimization/simulation, etc., can solve problems such as no longer applicable, achieve high flexibility, easy parallel computing, high The effect of precision
Pending Publication Date: 2022-08-02
SOUTHEAST UNIV
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As feature sizes decrease and pattern complexity increases, methods based on scalar diffraction theory are no longer applicable
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[0056] The present invention will be further explained below in conjunction with the accompanying drawings and specific examples.
[0057] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and, unless defined as herein, are not to be taken in an idealized or overly formal sense. explain.
[0058] The present invention provides a method for simulating light intensity distribution of a thick-resist lithography process based on a dispersion medium time-domain finite difference method, and the specific steps include:
[0059] Step 1. Build a corresponding lithography simulation model accor...
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Abstract
The invention discloses a light intensity distribution simulation method for a thick photoresist photoetching process, which comprises the following steps of: constructing a corresponding model in FDTD (Frequency Division Time Division) according to a contact / proximity actual photoetching condition, and applying a plane wave capable of controlling an incident angle, a polarization direction and a wavelength; processing the dispersive medium by adopting a recursive convolution method; adding a convolution perfect matching layer CPML boundary to the simulation area; cyclic calculation is carried out, and the electric field and the magnetic field of each Yee lattice point are updated in each time step until a steady state is reached; and according to the distribution of the electromagnetic field in the grid, obtaining the light intensity distribution in the photoresist by adopting a peak value detection method. The method solves the problem of lack of a high-precision thick photoresist photoetching process simulation model at present, has high flexibility, and is suitable for simulating photoetching under complex conditions.
Description
technical field [0001] The invention relates to a method for simulating light intensity distribution in a thick-resist photolithography process, and belongs to the field of MEMS processing process simulation. Background technique [0002] In the field of MEMS (Micro-Electro-Mechanical System, Micro-Electro-Mechanical System), UV (Ultraviolet, ultraviolet) thick photolithography process has become a mainstream process for manufacturing high aspect ratio structures. The UV thick-resist lithography process is a complex multi-parameter changing process, and its accuracy depends on the key parameters in the setup, the material properties of the photoresist, and the thickness of the photoresist. As feature sizes decrease and pattern complexity increases, the accuracy and precision of the microstructure of thick photoresists during photolithography has attracted increasing attention. [0003] Numerical simulation can accurately predict the final photoresist morphology of the litho...
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IPC IPC(8): G03F7/20G06F30/20
CPCG03F7/705G03F7/70508G06F30/20Y02E60/00
Inventor 周再发过凯麒黄庆安
Owner SOUTHEAST UNIV