Composite material, preparation method and electrochemical device
A composite material, silicon carbide layer technology, applied in circuits, electrical components, battery electrodes, etc., can solve the problems of high proportion of filling materials and coating materials, reduced capacity of modified natural graphite, and high cost of graphitization process. The effect of saving soft carbon filling and graphitization processes, improving kinetic properties, and shortening the preparation cycle
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[0013] The preparation method of the composite material of the present invention includes: S1, coating the surface of the natural graphite core with a silicon carbide layer. The preparation method of the composite material of the present invention directly protects the silicon carbide layer on the surface of the natural graphite core, which can save the process of soft carbon filling and graphitization of the natural graphite, thereby greatly reducing the material use cost and shortening the material preparation period.
[0014] In an optional embodiment, the preparation method may further include: S2, coating the surface of the silicon carbide with a carbon layer.
[0015] In alternative embodiments, the coating is a chemical vapor deposition coating, a spray drying coating, or a dipping coating.
[0016] The electrochemical device of the present invention includes the above-mentioned composite material.
[0017] The present invention is further described below through speci...
Embodiment 1
[0020] Spherical natural graphite with a mass of 500 g and a particle size of D50 of 5 μm was weighed and placed in a CVD rotary furnace. Connect the gas circuit, pass trichloromethylsilane (CH 3 SiCl 3 ) and hydrogen (H 2 ), the gas flow ratio is 3:2, and the air is ventilated for half an hour to replace the air in the rotary furnace; after replacing the gas, the temperature is raised from room temperature to 1500 degrees Celsius at a heating rate of 10 °C / min, and kept for 2 hours to complete the silicon carbide coating.
[0021] After the silicon carbide coating is completed, the temperature is lowered to 400 ° C, and the trichloromethylsilane (CH 3 SiCl 3 ) and hydrogen (H 2 ) gas flow valve, connected to argon, hydrogen, propylene gas flow valve, the flow rate, gas flow ratio is 7:1:2, the rotary furnace is heated to 750 °C at 5 °C / min, and the temperature is kept at 750 °C for 1h. Coated with conductive carbon, after the temperature dropped to room temperature, the ...
Embodiment 2
[0032] Spherical natural graphite with a mass of 500 g and a particle size of D50 of 10 μm was weighed and placed in a CVD rotary furnace. Connect the gas circuit, pass trichloromethylsilane (CH 3 SiCl 3 ) and hydrogen (H 2 ), the gas flow ratio is 3:2, and the air is ventilated for half an hour to replace the air in the rotary furnace; after replacing the gas, the temperature is raised from room temperature to 1500 degrees Celsius at a heating rate of 10 °C / min, and the temperature is maintained for 4 hours to complete the silicon carbide coating.
[0033] After the silicon carbide coating is completed, the temperature is lowered to 400 ° C, and the trichloromethylsilane (CH 3 SiCl 3 ) and hydrogen (H 2 ) gas flow valve, connected to the argon, hydrogen and propylene gas flow valves, the flow rate and gas flow ratio are 7:1:2, the rotary furnace is heated to 850 °C at 5 °C / min, and kept at 850 °C for 3 hours. Coated with conductive carbon, after the temperature dropped t...
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Abstract
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