Additive for silicon wafer cleaning, cleaning solution and cleaning method after silicon wafer texturing

Abstract

The invention provides an additive for cleaning after texturing of a silicon wafer, a cleaning solution and a cleaning method after texturing of the silicon wafer. Wherein the additive for cleaning the silicon wafer comprises the following components in percentage by mass: 3-5% of a water softener, 3-6% of an oxidant, 0.01-0.05% of a low-foam alkali-resistant penetrant, 1-3% of a buffering agent and the balance of water; wherein the oxidizing agent is selected from a group consisting of sodium hypochlorite, sodium chlorite, sodium perchlorate and sodium perborate, and the low-foam alkali-resistant penetrant is a sulfonate surfactant. By adding the additive disclosed by the invention into the cleaning solution, in actual production, the cost can be greatly reduced, the cleaning is more thorough, and the efficiency of the single crystal battery can be improved by 0.01%-0.05%. While the production cost is reduced, the sewage treatment cost is also reduced, and pollution to natural water and soil is avoided.

Description

Technical field:

[0001] The invention relates to the technical field of silicon wafer cleaning, in particular to an additive, a cleaning solution and a cleaning method for silicon wafers after texturing. Background technique:

[0002] In the production process of solar monocrystalline cells, texturing is one of the important processes, and texturing additives need to be used in the texturing process. If the texturing additives remain after the texturing process is completed, it will affect the efficiency of the cell. and yield, so it is necessary to add a further cleaning process after retexturing.

[0003] In the current post-texturing cleaning process, a mixed solution of hydrogen peroxide and alkali is generally used to remove the texturing solution and dirt. The hydrogen peroxide provides oxidation to decompose the organic matter adsorbed on the surface of the silicon wafer, and the alkali can enhance the oxidizing property of the hydrogen peroxide. In the cleaning proc...

Examples

Embodiment 1

[0023] An additive for silicon wafer cleaning, the mass percentage of each component is: 3% water softener, 4% oxidant, 0.05% low-foaming alkali-resistant penetrant, 1% buffer, and the balance is water .

[0024] Wherein, the water softener is sodium stearate, and the oxidizing agent includes sodium hypochlorite and sodium chlorite. The mass percentage of the sodium hypochlorite in the additive is 3%, the mass percentage of the sodium chlorite in the additive is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the The buffer is sodium sulfate.

Embodiment 2

[0026] An additive for silicon wafer cleaning, the mass percentage of each component is: 4% water softener, 5% oxidant, 0.03% low-foaming alkali-resistant penetrant, 2% buffer, and the balance is water .

[0027] Wherein, the water softener is sodium stearate, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the mass percentage of the additive is 3%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium sulfate.

Embodiment 3

[0029] An additive for silicon wafer cleaning, the mass percentage of each component is: 5% water softener, 3% oxidant, 0.01% low-foaming alkali-resistant penetrant, 3% buffer, and the balance is water .

[0030] Wherein, the water softener is disodium EDTA, the oxidant includes sodium hypochlorite and sodium perchlorate, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the additive The mass percentage of 1% is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium silicate.

Technical field:

[0001] The invention relates to the technical field of silicon wafer cleaning, in particular to an additive, a cleaning solution and a cleaning method for silicon wafers after texturing. Background technique:

[0002] In the production process of solar monocrystalline cells, texturing is one of the important processes, and texturing additives need to be used in the texturing process. If the texturing additives remain after the texturing process is completed, it will affect the efficiency of the cell. and yield, so it is necessary to add a further cleaning process after retexturing.

[0003] In the current post-texturing cleaning process, a mixed solution of hydrogen peroxide and alkali is generally used to remove the texturing solution and dirt. The hydrogen peroxide provides oxidation to decompose the organic matter adsorbed on the surface of the silicon wafer, and the alkali can enhance the oxidizing property of the hydrogen peroxide. In the cleaning proc...

Examples

Embodiment 1

[0023] An additive for silicon wafer cleaning, the mass percentage of each component is: 3% water softener, 4% oxidant, 0.05% low-foaming alkali-resistant penetrant, 1% buffer, and the balance is water .

[0024] Wherein, the water softener is sodium stearate, and the oxidizing agent includes sodium hypochlorite and sodium chlorite. The mass percentage of the sodium hypochlorite in the additive is 3%, the mass percentage of the sodium chlorite in the additive is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the The buffer is sodium sulfate.

Embodiment 2

[0026] An additive for silicon wafer cleaning, the mass percentage of each component is: 4% water softener, 5% oxidant, 0.03% low-foaming alkali-resistant penetrant, 2% buffer, and the balance is water .

[0027] Wherein, the water softener is sodium stearate, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the mass percentage of the additive is 3%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium sulfate.

Embodiment 3

[0029] An additive for silicon wafer cleaning, the mass percentage of each component is: 5% water softener, 3% oxidant, 0.01% low-foaming alkali-resistant penetrant, 3% buffer, and the balance is water .

[0030] Wherein, the water softener is disodium EDTA, the oxidant includes sodium hypochlorite and sodium perchlorate, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the additive The mass percentage of 1% is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium silicate.

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