Additive for silicon wafer cleaning, cleaning solution and cleaning method after silicon wafer texturing
A silicon wafer cleaning and additive technology, which is applied in the direction of detergent compounding agent, detergent composition, chemical instruments and methods, etc., can solve the problem of unsatisfactory cleaning effect after alkali and hydrogen peroxide, endangering natural water bodies and soil, and production cost of battery chips Advanced problems, to achieve the effect of reducing the cost of sewage treatment, less foam, and reducing hardness
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0023] An additive for silicon wafer cleaning, the mass percentage of each component is: 3% water softener, 4% oxidant, 0.05% low-foaming alkali-resistant penetrant, 1% buffer, and the balance is water .
[0024] Wherein, the water softener is sodium stearate, and the oxidizing agent includes sodium hypochlorite and sodium chlorite. The mass percentage of the sodium hypochlorite in the additive is 3%, the mass percentage of the sodium chlorite in the additive is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the The buffer is sodium sulfate.
Embodiment 2
[0026] An additive for silicon wafer cleaning, the mass percentage of each component is: 4% water softener, 5% oxidant, 0.03% low-foaming alkali-resistant penetrant, 2% buffer, and the balance is water .
[0027] Wherein, the water softener is sodium stearate, the oxidant includes sodium hypochlorite and sodium chlorite, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the mass percentage of the additive is 3%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium sulfate.
Embodiment 3
[0029] An additive for silicon wafer cleaning, the mass percentage of each component is: 5% water softener, 3% oxidant, 0.01% low-foaming alkali-resistant penetrant, 3% buffer, and the balance is water .
[0030] Wherein, the water softener is disodium EDTA, the oxidant includes sodium hypochlorite and sodium perchlorate, the sodium hypochlorite accounts for 2% by mass of the additive, and the sodium chlorite accounts for the additive The mass percentage of 1% is 1%, the low-foaming alkali-resistant penetrant is a sulfonate surfactant, and the buffer is sodium silicate.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com