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Heterojunction solar cell with composite electrode layer and preparation method thereof

A technology of solar cells and composite electrodes, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems affecting battery performance, complex methods, poor conductivity of silicon-containing films, etc., to achieve reduced ITO film thickness, good reflection, Voc no drop effect

Pending Publication Date: 2022-08-05
RISEN ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the poor conductivity of the silicon-containing film, in order to ensure the reliability and conductivity of the battery, it is necessary to use chemical etching or laser grooving at the electrode position after plasma chemical vapor deposition or atomic layer deposition of the silicon-containing film in the current public technology. Or printing corrosion materials to remove silicon-containing films, these methods are complex and will affect the performance of the battery, so a simpler method is needed to achieve the export of electrodes

Method used

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  • Heterojunction solar cell with composite electrode layer and preparation method thereof
  • Heterojunction solar cell with composite electrode layer and preparation method thereof
  • Heterojunction solar cell with composite electrode layer and preparation method thereof

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Experimental program
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Effect test

specific Embodiment approach

[0040] In this embodiment, a composite electrode layer including a TCO layer, a metal film layer and a silicon-containing thin film layer is developed on the back to replace the original single-layer ITO layer, so as to achieve or exceed the performance improvement efficiency of the original single-layer ITO material, and can greatly reduce the The low indium heterojunction cell was successfully fabricated at low cost. The specific implementation is as follows:

[0041] like figure 1 As shown, the heterojunction solar cell with a composite electrode layer includes using n-type or p-type single crystal silicon c-Si as a substrate 1, and sequentially depositing a first intrinsic amorphous silicon layer 2 (a) on the upper surface of the substrate 1 -SiH(i)), n-type amorphous silicon layer 3 and upper electrode layer 4; sequentially deposit a second intrinsic amorphous silicon layer 5 (a-SiH(i)), p-type amorphous silicon layer on the lower surface of substrate 1 The silicon laye...

Embodiment approach

[0048] As a preferred embodiment, the overall thickness of the lower electrode layer is greater than or equal to 40 nm.

[0049] This embodiment also provides a method for preparing the above-mentioned heterojunction solar cell with a composite electrode layer, comprising the following steps:

[0050] Step 1, the n-type or p-type single crystal silicon wafer is textured to obtain the desired texture;

[0051] Step 2, depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on the upper surface, and depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the lower surface;

[0052] Step 3: Use magnetron sputtering to deposit a layer of Front ITO with a thickness of 60-90 nm on the upper surface from top to bottom, and use magnetron sputtering or reactive plasma method to deposit a layer of thickness on the lower surface from bottom to top. The RearITO layer is 1-40nm, the AZO layer is 0-90nm thick, the metal film lay...

Embodiment 1

[0060] A preparation method of a heterojunction solar cell with a composite electrode layer, comprising the steps of:

[0061] Step 1, the n-type single crystal silicon wafer is textured to obtain the desired texture;

[0062] Step 2, depositing an intrinsic amorphous silicon layer and an n-type amorphous silicon layer on the upper surface, and depositing an intrinsic amorphous silicon layer and a p-type amorphous silicon layer on the lower surface;

[0063] Step 3: Introduce argon and oxygen at room temperature, set the gas flow ratio of argon to oxygen at 40:1, keep the cavity pressure at 0.5Pa, turn on the sputtering power supply, and use the magnetron sputtering method from the top. On the other hand, a Front ITO layer with a thickness of 75nm is deposited on the upper surface, the power density is 5.07kw / m, the square resistance of the Front ITO layer is 65Ω / □, and the substrate temperature is set to 150℃; the gas flow of argon and oxygen The ratio is set to 33:1, the ca...

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Abstract

The invention discloses a heterojunction solar cell with a composite electrode layer and a preparation method thereof, and belongs to the field of new energy, and the preparation method comprises the steps: taking n-type or p-type monocrystalline silicon c-Si as a substrate, and sequentially depositing an intrinsic amorphous silicon layer, an n-type amorphous silicon layer and an upper electrode layer on the upper surface; an intrinsic amorphous silicon layer, a p-type amorphous silicon layer and a lower electrode layer are sequentially deposited on the lower surface, and the lower electrode layer sequentially comprises a TCO layer, a metal film layer and a silicon-containing thin film layer from top to bottom. The low-indium heterojunction battery has the advantages that the composite electrode layer comprising the TCO layer, the metal film layer and the silicon-containing film layer is developed on the back face to replace an original single-layer ITO layer, the performance of the original single-layer ITO material is achieved or exceeds the performance of the original single-layer ITO material, the efficiency is improved, the cost can be greatly reduced, and the low-indium heterojunction battery is successfully manufactured.

Description

technical field [0001] The invention relates to the field of new energy, in particular to a heterojunction solar cell with a composite electrode layer and a preparation method thereof. Background technique [0002] Heterojunction solar cell (HIT) technology, as a high-efficiency technology route that has attracted great attention in the industry in recent years, has become the industry-recognized next-generation commercial photovoltaic industry due to its high photoelectric conversion efficiency, excellent performance, large cost reduction space, and good prospects for grid parity. technology. [0003] For high-efficiency heterojunction cells, one of the current difficulties lies in cost reduction. On the road of heterojunction development, the electrode layer is one of the necessary materials. Under the general trend of efficiency improvement and cost reduction, the electrode layer There is an urgent need for performance improvement and cost reduction. The improvement of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0236H01L31/072H01L31/18
CPCH01L31/022425H01L31/022466H01L31/02363H01L31/072H01L31/1804H01L31/1884Y02P70/50
Inventor 赵锋任明冲毛卫平徐锐杨伯川
Owner RISEN ENERGY
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