Patterned flexible sensor prepared by femtosecond and nanosecond laser and preparation method thereof
A flexible sensor and patterning technology, applied in photovoltaic power generation, final product manufacturing, printed circuit manufacturing, etc., can solve the problems of light transmission performance increase, light transmission performance decline, conductive performance decline, etc., to achieve good and excellent light transmission performance The effect of electrical properties
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Embodiment 1
[0034] like figure 1 As shown, a method for preparing a patterned transparent conductive film by laser provided in this embodiment specifically includes the following steps:
[0035] S1-1. Use a pipette to transfer 0.5 mg of curing agent 1 into a plastic cup 2 containing 7.5 mg of PDMS monomer 3, and stir well to make the curing agent 1 and PDMS monomer 3 fully mixed (the PDMS monomer and cured All agents belong to Dow Corning 184PDMS glue);
[0036] S1-2. Place the plastic cup 2 together with the well-mixed curing agent 1 and PDMS 3 in the reaction tower 4 to remove the air bubbles in the mixed solution;
[0037] S1-3. Spin-coat the bubble-free PDMS mixture 5 onto the clean silicon wafer 6, set the rotation speed of the silicon wafer to be 500 rpm, and the spin-coating time to be 120 s;
[0038] S1-4. After the spin coating is completed, put the silicon wafer 6 coated with the PDMS mixed solution 5 into the vacuum oven 7 . Set the vacuum oven temperature to 100°C and the b...
Embodiment 2
[0047] like figure 1 As shown, a method for preparing a patterned transparent conductive film by laser provided in this embodiment specifically includes the following steps:
[0048] S1-1. Use a pipette to transfer 0.6 mg of curing agent 1 into a plastic cup 2 containing 7.2 mg of PDMS monomer 3, and stir well to fully mix curing agent 1 and PDMS monomer 3 (the PDMS monomer and cured All agents belong to Dow Corning 184PDMS glue);
[0049] S1-2. Place the plastic cup 2 together with the well-mixed curing agent 1 and PDMS 3 in the reaction tower 4 to remove the air bubbles in the mixed solution;
[0050] S1-3. Spin-coat the bubble-free PDMS mixture 5 onto the clean silicon wafer 6, set the rotation speed of the silicon wafer to be 600 rpm, and the spin-coating time to be 100 s;
[0051] S1-4. After the spin coating is completed, put the silicon wafer 6 coated with the PDMS mixed solution 5 into the vacuum oven 7 . Set the temperature of the vacuum oven to 100°C and the bakin...
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