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Thin semiconductor chip and its manufacturing method

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, manufacturing tools, etc., can solve problems such as low mirror polishing efficiency

Inactive Publication Date: 2003-09-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is extremely inefficient to use mirror polishing in mass production

Method used

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  • Thin semiconductor chip and its manufacturing method
  • Thin semiconductor chip and its manufacturing method
  • Thin semiconductor chip and its manufacturing method

Examples

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no. 1 example

[0039] Figures 1A to 1E The thinning process of the semiconductor device wafer in the semiconductor chip manufacturing method according to the first embodiment is shown. see Figures 1A to 1E , the semiconductor device wafer thinning process will be specifically described below. like Figure 1A As shown, first, a semiconductor device wafer 11 is fixed to a support plate 13 made of silicon by using a heat-foaming adhesive sheet 12 as a double-sided adhesive sheet. The semiconductor device wafer 11 has a GaAs substrate having a diameter of 3 inches and a thickness of 600 µm and a large number of devices (not shown) formed on the front side of the GaAs substrate. Depending on the device type, the device thickness ranges from about 1-10 μm, so the total thickness of the semiconductor device wafer 11 is about 601-610 μm. A semiconductor device wafer 11 is prepared according to known techniques. A silicon wafer having a diameter of 3 inches and a thickness of 380 μm was used a...

no. 2 example

[0062] see below Figures 1A-1E A second embodiment is described. In the second embodiment, after the semiconductor device wafer 11 is ground, the maximum height of the surface irregularities of its ground surface is reduced to a thickness of 1 μm or less by grinding the semiconductor device wafer.

[0063] The grinding process of the semiconductor device wafer is similar to that of the first embodiment. The grinding process is briefly described below. like Figure 1A and 1B As shown, a semiconductor substrate of a semiconductor device wafer 11 having a thickness of 600 μm is thinned to a thickness of 70 μm using a grinding wheel whose grain diameter is 8 μm. The time taken for the thinning operation was about 10 minutes. At this time, the maximum height of the surface irregularities of the polished surface of the semiconductor device wafer 11 was about 3 μm.

[0064] When the grinding process is completed, the grinding process starts. In the grinding process, the vacuu...

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Abstract

The invention discloses a semiconductor chip and a manufacturing method thereof. The semiconductor device wafer (11) is combined with the support plate (13) using a double-sided thermal foam adhesive sheet (12), and the assembly is fixed to the vacuum suction base (14) by vacuum suction. The thermally foamed adhesive layer of the adhesive sheet (12) serves as a vibration-absorbing layer, thereby making it difficult for the wafer (11) to be broken during high-speed polishing operations even if the wafer uses a GaAs substrate that is easily broken. There is no need for wax to fix the wafer (11), and there is no need to use oily abrasives, which prevents wax and oil contamination and makes cleaning the wafer easy. Heating at 130° C. expands the thermal foam adhesive layer of the adhesive sheet (12), so that the wafer (11) is easily separated from the adhesive sheet.

Description

technical field [0001] The present invention generally relates to methods of manufacturing semiconductor chips and semiconductor chips produced therefrom. More particularly, it relates to the thinning of semiconductor device wafers and semiconductor chips made from the thinned semiconductor device wafers. Background technique [0002] In recent years, high-density and high-integration devices have been continuously produced in the field of compound semiconductors. As mobile communication devices become smaller and lighter, the devices become more sophisticated. As the chip area becomes smaller, the thermal resistance of the device becomes higher and higher. Therefore, in order to obtain high-performance and high-reliability equipment, it is necessary to reduce the thermal resistance of the equipment. To this end, various designs to enhance the heat radiation effect have been employed. The most effective way to reduce the thermal resistance of the device is to pattern the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683B24B7/22H01L21/301H01L21/302H01L21/304H01L21/48H01L21/68H01L31/0336
CPCB24B7/228B24B41/06H01L21/6835H01L2221/68331H01L2221/6834Y10S438/906
Inventor 刘翊
Owner SHARP KK