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Magnetic field inducing method for growing magnetic one dimension nano line array

A nanowire array and magnetic technology, applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problem of low magnetic parameters such as remanence ratio, and achieve high remanence ratio, good easy magnetization performance, and arbitrary length control Effect

Inactive Publication Date: 2005-03-02
TSINGHUA UNIV
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Problems solved by technology

[0012] The purpose of the present invention is to solve the problem that the magnetic parameters such as coercive force and remanence ratio are too low to meet the needs of practical applications in the process of preparing nanowire arrays by direct current electrodeposition of the template method, and propose a magnetic field-induced growth of high-performance magnetic one-dimensional nano Fabrication method of line array

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  • Magnetic field inducing method for growing magnetic one dimension nano line array
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Embodiment Construction

[0027] The preparation method of the magnetic field-induced growth magnetic one-dimensional nanowire array proposed by the present invention is described in detail as follows through the examples:

[0028] This embodiment is a method for preparing a magnetic one-dimensional nickel nanowire array by direct current electrodeposition of an alumina template, which specifically includes the following steps:

[0029] 1. Preparation process for the alumina template:

[0030] (1) Alumina template adopts double anodic oxidation method. The aluminum sheet after degreasing and polishing was used as the anode, the copper was used as the counter electrode, the electrolyte was sulfuric acid, and the temperature was kept at 0°C. The voltage between electrodes is 28V, anodized for 12 hours;

[0031] (2) Remove the formed aluminum oxide layer with a mixed solution of chromic acid and phosphoric acid, wash it, and perform the second anodic oxidation. same condition;

[0032] (3) Remove the ...

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Abstract

The present invention relates to magnetic field inducing process of growing one-dimensional nanometer magnetic linear array, and belongs to the field of production technology of one-dimensional nanometer magnetic linear array. The present invention includes two processes of preparing template with homogeneously distributed through holes and DC electric deposition. The DC electric deposition process includes setting homogeneous strong magnetic field outside the electroplating bath; sputtering one metal electrode layer on one side of the template; setting the template as cathode inside the electroplating bath with anode of the metal to be plated, graphite or Pt and electrolyte of the salt solution of the metal to be plated; applying set magnetic field; applying voltage across the cathode and anode and controlling current for constant electric deposition speed for certain time to obtain nanometer linear array grown in template holes.

Description

technical field [0001] The invention belongs to the technical field of preparation of a magnetic one-dimensional nanowire array, and the feature relates to the improvement of a template method. technical background [0002] Magnetic nanowire arrays have potential applications in discrete media perpendicular magnetic recording, magnetic nanodevices, magneto-optical devices, and microwave devices. There are many methods for preparing magnetic one-dimensional nanowire arrays, such as photolithography, self-assembly, template method, etc. [P.Aranda et al, J.Magn.Magn.Mater.249, 214-219]. The template method can be divided into alumina templates, crystal steps, polymer templates, biomolecular templates, etc. according to different templates. Regular arrays can be obtained by photolithography, but the speed of photolithography is slow, the price is high, the density of the arrays carved out is low, and the nanowires in the array cannot be made too long. The self-assembly method ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 田丰朱静
Owner TSINGHUA UNIV