Method of manufacturing semiconductor device
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insulation film cracking, insulation, damage, etc., and achieve the effect of preventing performance and reliability from being reduced.
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Embodiment 1
[0047] In this embodiment, the inside of the trench is oxidized at a low temperature. figure 1 is a plan view of a semiconductor device produced by the method described in this example. Figure 10 and Figure 11 respectively figure 1Schematic sectional view at position Y-Y and position X-X shown, Figure 2 to Figure 10 It is a cross-sectional view showing the sequence of the process of forming a MOS device on an SOI substrate at position Y-Y. However, the gate electrode material of the MOS device described in this specification is not limited to metal (Metal), and also includes the case where a conductive semiconductor is used.
[0048] First, an SOI substrate is formed of a silicon oxide substrate 1 and a silicon film 2 . On the surface of silicon film 2 that is not opposed to silicon oxide substrate 1, silicon oxide film 3 is formed by oxidation. Then, polysilicon 4 and silicon nitride film 5 are sequentially stacked on silicon oxide film 3 . The region R1 is set to fo...
Embodiment 2
[0068] In this embodiment, annealing is performed in a nitrogen atmosphere. Figure 12 to Figure 14 yes figure 1 The schematic cross-sectional view of position Y-Y shown sequentially represents the process of forming a MOS device on an SOI substrate.
[0069] First, as in the first and second steps described in the embodiment, various films are formed on the SOI substrate, and then the trench 7 ( image 3 ). At this time, metal contaminants may adhere to each stage of forming silicon film 2 or silicon oxide film 3 , polysilicon 4 , silicon nitride film 5 , etc., and may also adhere to the bottom surface of trench 7 .
[0070] Second, the photoresist resin 6 is removed and nitrided. In this nitriding process, the surface of the silicon film 2 is annealed in a nitrogen atmosphere at 800°C to 1200°C for 30 seconds to 4 hours, thereby forming a silicon nitride film 15 as an insulating film on the surface of the silicon film 2 exposed in the trench 7 . At the same time, the po...
Embodiment 3
[0083] In this embodiment, the inside of the trench is etched. Figure 15 to Figure 17 yes figure 1 The schematic cross-sectional view of position Y-Y shown sequentially represents the process of forming a MOS device on an SOI substrate.
[0084] First, as in the first and second steps described in Embodiment 1, various films are formed on the SOI substrate, and then the trench 7 ( image 3 ). At this time, there is a possibility that metal contaminants may adhere to the bottom surface of the trench 7 .
[0085] Second, remove the photoresist resin 6, and use ammonia perhydrogen (NH 4 OH / H 2 o 2 / H 2 (O: APM) based solution to wet etch the surface of the silicon film 2 exposed in the trench 7 . Accordingly, metal contamination substances adhering to the silicon film 2 can be removed. For example, when the immersion depth of metal contaminants into the silicon film 2 is about 10 nm, the thickness of the silicon film removed by wet etching is preferably 10 nm to 20 nm. ...
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Abstract
Description
Claims
Application Information
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