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Process for preparing monocrystalline silicon nano line array with single axial arranging

A silicon nanowire array, axial technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc.

Inactive Publication Date: 2005-11-09
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But so far, there is no report on the preparation of monocrystalline silicon nanowire arrays arranged in a single axial direction in the world.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] First, use 4.6mol / L hydrofluoric acid and 0.01mol / L silver nitrate reaction solution to deposit a layer of silver nanoparticle film on the surface of the cleaned p-type silicon substrate, and the deposition time is 1 minute. Then the silicon substrate that the surface is deposited with silver nanoparticles is soaked in the airtight container kettle that contains hydrofluoric acid and ferric nitrate mixed solution (hydrofluoric acid and ferric nitrate concentration are respectively 4.6mol / L and 0.135mol / L), in After treatment at 50°C for 60 minutes, a single axially arranged p-type silicon nanowire array can be obtained.

Embodiment 2

[0029] First, use 4.6mol / L hydrofluoric acid and 0.01mol / L silver nitrate reaction solution to deposit a layer of silver nanoparticle film on the surface of the cleaned p-type silicon substrate, and the deposition time is 1 minute. Then the silicon substrate that the surface is deposited with silver nanoparticles is soaked in the airtight container kettle that contains hydrofluoric acid and ferric nitrate mixed solution (hydrofluoric acid and ferric nitrate concentration are respectively 4.6mol / L and 0.135mol / L), in After treatment at 50°C for 30 minutes, a single axially arranged p-type silicon nanowire array can be obtained.

Embodiment 3

[0031] First, use 4.6mol / L hydrofluoric acid and 0.01mol / L silver nitrate reaction solution to deposit a layer of silver nanoparticle film on the surface of the cleaned n-type silicon substrate, and the deposition time is 1 minute. Then the silicon substrate that the surface is deposited with silver nanoparticles is soaked in the airtight container kettle that contains hydrofluoric acid and ferric nitrate mixed solution (hydrofluoric acid and ferric nitrate concentration are respectively 4.6mol / L and 0.135mol / L), in After treatment at 50°C for 60 minutes, a single axially arranged n-type silicon nanowire array can be obtained.

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PUM

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Abstract

A process for preparing the array of monosilicon nano wires arranged monoaxially includes such steps as washing silicon chip, chemical plating to deposit a nanofilm of Ag or Au on its surface, immersing it in the mixed solution of hydrofluoric acid, iron (or magnesium or nickel) nitrate or H2O2 in a sealed container, baking at ordinary temp-60 deg.C, cooling, rinsing in deionized water, and drying in air.

Description

technical field [0001] The invention relates to a nano-silicon wire array and a preparation method thereof, in particular to a preparation method of a large-area monocrystalline silicon nano-wire array arranged in an axial direction, and belongs to the technical field of nano-material preparation and application. Background technique [0002] Due to their unique structures and physical properties, one-dimensional semiconductor nanomaterials not only provide valuable research objects for fundamental physics research, but also will play a key role in future mesoscopic and nano-optoelectronic devices. Due to the important position of silicon materials in the traditional microelectronics industry, the research of one-dimensional silicon nanowires has received great attention. The current nano silicon wire preparation methods mainly include: [See: Westwater, J., Gosain, D.P., Tomiya, S., Usui, S. & Ruda, H.Growth of silicon nanowires via gold / silane vapor-liquid-solid reaction. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
Inventor 彭奎庆吴茵方慧朱静
Owner TSINGHUA UNIV
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